Applied Materials, Inc.

Vicky U Nguyen

Wei Liu

Christopher Sean Olsen

Johanes F Swenberg

Shiyu Sun

Jacob Newman

Jing Tang

Tze Wing Poon

Udayan Ganguly

Sunderraj Thirupapuliyur

Swaminathan T Srinivasan

Yoshitaka Yokota

Swaminathar Srinivasan

Yoshita Yokota

Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof

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San Jose, CA, United States of America

Vicky U Nguyen