Intel Corporation

Vicky M Ochoa

Chien Chiang

David B Fraser

Chuanbin Pan

Sychyi Fang

Gary William Ray

Joyce C Sum

Jeremy A Theil

Jin Hyung Lee

Thomas N Marieb

Sing-Mo Tzeng

Sing-Mo H Tzeng

Anne S Mack

The present invention relates to semiconductor devices. More specifically, the invention discloses the use of dummy structures to improve thermal conductivity, reduce dishing and strengthen layers formed with low dielectric constant materials.

Fabricating low K dielectric interconnect systems by using dummy structures to enhance process

A process for forming air gaps in an interconnect system is disclosed. At least two conductive lines are formed upon a substrate. A low-dielectric constant material (LDCM) is formed between the at least two conductive lines. Formation of the LDCM creates first and second adhesive forces between the LDCM and the at least two conductive lines and between the LDCM and the substrate, respectively. The LDCM is expanded. A dielectric layer is formed onto the LDCM and the at least two conductive lines. Formation of the dielectric layer creates a third adhesive force between the LDCM and the dielectric layer. The LDCM is contracted. Contraction of the LDCM resulting from a fourth force within the LDCM. Each of the first, second, and third adhesive forces are substantially stronger than the fourth force.

Method for forming air gaps for advanced interconnect systems

An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.

Method for fabricating an interconnect structure with hard mask and low

Interconnect structure with hard mask and low dielectric constant

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Pleasanton, CA, United States of America

Vicky M Ochoa