Massachusetts Institute of Technology

Vicky Diadiuk

Mark Alexander Hollis

Arthur R Calawa

Frank W Smith

Han Q Le

Steven H Groves

An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Ultra-high-speed photoconductive devices using semi-insulating layers

A lateral p-i-n photodetector and a method of forming a lateral p-i-n photodetector in which p- and n-type regions are formed on a semi-insulator or i-type body by allowing metal and p-dopant compounds and metal and n-dopant compounds onto the i-type body. During alloying, p- and n-type regions are formed in the i-type body by diffusion of the dopants from the compounds, leaving the metallic compounds as n- and p-type contacts over respective p- and n-regions. In preferred embodiments, the i-material is either Fe doped InP or InGaAs.

Growing community of inventors

Lincoln, MA, United States of America

Vicky Diadiuk