Saint-gobain Ceramics & Plastics, Inc.

Saint-gobain Lumilog

Ivworks Co., Ltd.

Vianney Le Roux

Bernard Beaumont

Douglas Edwin Ward

Carlijn Lucinde Mulder

Ian T Sines

Angela Wamina Kwapong

Jason Cole

Douglas E Ward

Angela Kwapong

The invention relates to a method for production of wafers of nitrides of element () () from a self-supported crystal of nitride of element (), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal () having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.

Method for the production of wafers of nitride of element 13, having a non-zero truncation angle

A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

Chemical mechanical planarization slurry and method for forming same

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Antibes, France

Vianney Le Roux