Applied Materials, Inc.

Viachslav Babayan

Ludovic Godet

Srinivas D Nemani

Robert B Moore

Kyle Moran Hanson

Qiwei Liang

Douglas A Buchberger, Jr

Michael Wayne Stowell, Jr

Daniel J Woodruff

Randy Harris

Gregory J Wilson

Chentsau Chris Ying

Zhong Qiang Hua

Bhargav S Citla

Jingjing Liu

Adolph Miller Allen

Christine Y Ouyang

Kirankumar Neelasandra Savandaiah

Seshadri Ramaswami

William R Johanson

Sang Ki Nam

Tobin Kaufman-Osborn

Vanessa Faune

Vaibhav Soni

Carl R Johnson

Jingyu Qiao

Andrej Halabica

Sundarapandian Ramalinga Vijayalaks Reddy

Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency ('RF') plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

Selective etch using material modification and RF pulsing

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Method and apparatus for post exposure processing of photoresist wafers

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

Apparatus for post exposure bake

Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.

Post exposure processing apparatus

Disclosed herein is an electrostatic chuck (ESC) carrier. The ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. A first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. A first conductor is in the first through substrate opening, and a second conductor is in the second through substrate opening. The ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. An oxide layer may be formed over the first electrode and the second electrode.

Method and apparatus for thin wafer carrier

Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.

Biased cover ring for a substrate processing system

The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

High temperature vapor delivery system and method

A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.

High density, low stress amorphous carbon film, and process and equipment for its deposition

Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. In one embodiment, a major axis of the processing volume is oriented vertically and a minor axis of the processing volume is oriented horizontally. One or more electrodes may be disposed adjacent the processing volume and at least partially define the processing volume. Process fluid is provided to the processing volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A plurality of seals maintains the fluid containment integrity of the processing volume during processing. A post process chamber for rinsing, developing, and drying a substrate is also provided.

A process chamber having moveable electrodes for generating a parallel field within a process volume filled with a fluid is provided. In one implementation, a major axis of the process chamber is oriented vertically and a substrate support is disposed opposite a plurality of moveable electrodes extending along the major axis of the process chamber. In certain implementations, the substrate support is electrically floating and capable of rotating about a minor axis of the process chamber during processing of a substrate.

Apparatus for field guided acid profile control in a photoresist layer

Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

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Sunnyvale, CA, United States of America

Viachslav Babayan