Robert Boschgmbh

Vesna Goebel

Herbert Goebel

A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given chip dimensions. The semiconductor arrangement includes trenches introduced in the interior of the chip, which trenches reduce power loss and improve the heat dissipation of the chip, as well as reduce the forward voltage of diode.

Semiconductor diode and method for producing the same

A method is proposed that functions to produce Zener diodes. The method includes a two-part film diffusion step for producing flatter and deeper doping profiles using neutral films.

Method for producing diodes

In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.

Method for manufacturing a semiconductor arrangement by introducing

A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.

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Reutlingen, Germany

Vesna Goebel