Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Rheinisch-westfaelische Technische Hochschle Aachen

Commissariat À I'energie Atomique

Rheinisch-westfalische Technische Hochschule Aachen

Veronique Sousa

Jean-Francois Nodin

Bernard Bechevet

Sandrine Lhostis

Cyril Dressler

Pierre Gaud

Marie-Claire Cyrille

Bertrand Delaet

Heinrich Kurz

Peter Haring Bolivar

Dae-Hwang Kim

Florian Merget

Peter Haring-Bolivar

A memory device including: one inert electrode including an electrically conductive material, a part of at least one material of resistivity higher than that of the material of the inert electrode, positioned around the inert electrode, a solid electrolyte positioned on at least one part of the inert electrode and of the part of electrically insulating material, and including metal ions originating from an ionizable metal part positioned on the solid electrolyte. The ratio between the coefficient of electrical resistivity of the material of resistivity higher than that of the material of the inert electrode and the coefficient of electrical resistivity of the material of the inert electrode is equal to or higher than approximately 100, and the coefficient of thermal conductivity of the electrically insulating material is equal to or higher than approximately 10 W&#xb7;m&#xb7;K.

Memory device and CBRAM memory with improved reliability

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.

Phase-change memory cell

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a 'trapped layer', whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a 'free layer' and a non-magnetic layer, known as an &#x201c;intermediate layer&#x201d;, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it.

Spin-valve or tunnel-junction radio-frequency oscillator

A microelectronic device includes: at least one cell or element including at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode. The stack includes at least one doped chalcogenide layer capable of forming a solid electrolyte, the doped chalcogenide layer being provided on and in contact with the first electrode; at least one interface layer provided on and in contact with the doped chalcogenide layer, the interface layer being based on a material different from the chalcogenide, the material being carbon or carbon comprising a metallic additive or a semiconducting additive; and at least one metallic ion donor layer provided on and in contact with the interface layer, the metallic ion donor layer being an ion source for the solid electrolyte.

Method for making PMC type memory cells

A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component

A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the memory cell-during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.

PMC memory with improved retention time and writing speed

The storage medium comprises an array of memory cells () which can be addressed by first () and second () conductors. Each memory cell () comprises one zone () of an active layer () which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (), such as to selectively connect the first () and second () associated conductors. Binary information stored in the memory cell () is determined by the electrical conducting state of the corresponding zone () of the active layer (). The active layer () can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer () which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.

Growing community of inventors

Grenoble, France

Veronique Sousa