Lam Research Corporation

Lumileds LLC

Vernon W Wong

Richard J Meinecke

Iqbal A Shareef

James V Tietz

Trace L Boyd

Richard D Beer

Eric A Terbeek

Daniel Bernardo Roitman

Gerald Z Yin

Marcel Rene Bohmer

Kentaro Shimizu

Randall S Mundt

Hisashi Masui

Mark Taskar

Ken Shimizu

Dariush Rafinejad

Christopher Charles Griffin

David Erskine

Harry P Wong

Richard J Meinccke

Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Patterned lumiramic for improved PCLED stability

A light emitting package and method of making the package are described. The package contains an LED bonded to a light converting layer using an adhesive. The adhesive is jet printed, mask sprayed or extruded onto one of the surfaces before bonding. The adhesive has materials in different sections that differ in refractive index, oxygen permeability, and/or heat conductivity. The materials are formed in concentric rings around the adhesive center, islands or lines and are disposed to provide optical lensing or increasing permeability/heat conductivity with decreasing distance from the center. A substantially-reflective optical side coat surrounds the LED, adhesive layer and connecting structure.

Adhesive layer with varied material properties

A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

Apparatus for delivering a process gas

A gas distribution system for supplying a gas mixture to a plasma process chamber is provided. A first valve arrangement is connected to upstream ends of a first gas line and a second gas line. A second valve arrangement is connected to downstream ends of the first gas line and the second gas line. A first gas distribution outlet line is connected between a gas supply and the first valve arrangement and a first chamber inlet line connected between the second valve arrangement and the plasma process chamber. A first evacuation line is connected to the first gas line at a location between the first valve arrangement and the second valve arrangement. A second evacuation line is connected to the second gas line at a location between the first valve arrangement and the second valve arrangement. The first evacuation line and second evacuation line are in fluid communication with a vacuum line. A controller is operable to actuate the first valve arrangement and second valve arrangement to selectively flow the gas mixture from the gas supply to the plasma process chamber through the first gas line while the second gas is selectively evacuated by the vacuum line; or to selectively flow the gas mixture from the gas supply to the plasma process chamber through the second gas line while the first gas line is selectively evacuated by the vacuum line.

Alternate gas delivery and evacuation system for plasma processing apparatuses

A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

Methods for delivering a process gas

A method for determining an actual gas flow rate as gas flows through a gas flow delivery system is provided. The method includes sending the gas through the gas flow delivery system into a gas conduit, wherein a section of the gas conduit is widened to form an orifice. The method also includes pressurizing the gas to create a choked flow condition within the orifice of the gas conduit. The method further includes measuring upstream pressure of the gas via a set of pressure sensors. The method yet also includes calculating the actual flow rate based on the upstream pressure of the orifice of the gas conduit.

Methods for performing transient flow prediction and verification using discharge coefficients

A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas flow rate. The apparatus includes first and second volumes, wherein the second volume is larger than the first volume. The apparatus also includes first and second pressure measurement devices, wherein the second pressure measurement device is capable of measuring higher pressures. Based on the target gas flow rate to be measured, either the first or second volume can be selected as the test volume, and either the first or second pressure measurement device can be selected to measure the pressure in the test volume. Configurability of the apparatus enables accurate measurement of gas flow rates over a broad range and in an time efficient manner.

System and method for gas flow verification

A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.

Methods for performing actual flow verification

Disclosed is a method for implementing a vacuum seal between an interface of a transport chamber interface port of a transport chamber and another chamber. The transport chamber being configured to mate with the another chamber in an adjacent relationship. The method includes placing an insert plate having a sealing surface containing a first O-ring into the transport chamber interface port such that the first O-ring is sandwiched between the sealing surface and a surface of the another chamber. Therefore, a vacuum seal is achieved between the transport chamber and the another chamber within the transport chamber interface port via the first O-ring.

Chamber interfacing O-rings and method for implementing same

A wafer clamping mechanism includes a clamp ring having a central opening corresponding to the geometry of a conventional semiconductor wafer. An overhang located about the opening engages the corresponding semiconductor wafer when in place on an electrode of a plasma reactor. The clamp ring is resiliently mounted on a housing which holds a second electrode. The clamp ring is automatically engaged against the wafer as the spacing between the two electrodes is adjusted to a desired gap width. A raised annular barrier on the lower electrode circumscribes the wafer and engages a mating surface on the clamp ring in order to enhance alignment of the clamp.

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Mountain View, CA, United States of America

Vernon W Wong