Austriamicrosystems Ag

Ams Ag

Verena Vescoli

Rainer Minixhofer

Franz Schrank

Jong Mun Park

Gerald Meinhardt

Anderson Singulani

Ingrid Jonak-Auer

Raffaele Coppeta

Jordi Teva

Jacopo Brivio

A semiconductor body () comprises a field-effect transistor (). The field-effect transistor () comprises a drain region () of a first conduction type, a source region () of the first conduction type, a drift region () and a channel region () of a second conduction type which is opposite to the first conduction type. The drift region () comprises at least two stripes () of the first conduction type which extend from the drain region () in a direction towards the source region (). The channel region () is arranged between the drift region () and the source region ().

Field-effect transistor and method for producing a field-effect transistor

A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of feedthroughs that extend through the semiconductor body.

Photodiode with integrated semiconductor circuit and method for the production thereof

At least one terminal contact surface () is formed on a topmost metal plane (). Under it, in a secondmost metal plane (), is a reinforcement region (), in which the secondmost metal plane () is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface () onto the secondmost metal plane () that is occupied by the metal of the secondmost metal plane () amounts to at least one third of the area.

Semiconductor component with terminal contact surface

Growing community of inventors

Graz, Austria

Verena Vescoli