Seagate Technology Incorporated

Venu Vaithyanathan

Nurul Amin

Ming Sun

Chulmin Jung

Youngpil Kim

Wei Tian

Insik Jin

Wei Tan

Insik Jim

A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

Non-volatile memory cell with programmable unipolar switching element

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Bloomington, MN, United States of America

Venu Vaithyanathan