Murata Manufacturing Co., Ltd.

Resonant, Inc.

Ventsislav Yantchev

Patrick J Turner

Viktor Plesski

Robert B Hammond

Soumya Yandrapalli

Bryant Garcia

Julius Koskela

Neal O Fenzi

Jesson John

Andrew Kay

Mike Eddy

Greg Dyer

Charles Chung

Sean McHugh

Sho Nagatomo

Douglas Jachowski

Dejan Nenov

Albert Cardona

Kazunori Inoue

Gregory L Hey-Shipton

James R Costa

Chris O'Brien

Garrett Williams

Wei Yang

Doug Jachowski

Luke Myers

Filip L Iliev

Marie Chantal Mukandatimana

Kuan Zhang

Chris O′Brien

Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.

Filter device

An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts/tp≤ts/tpis satisfied, where tp, tp, ts, and tsare respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

Acoustic wave device

Acoustic resonators, acoustic filter devices and methods of making the same. An acoustic resonator device includes a piezoelectric layer having front and back surfaces, a high acoustic velocity layer on the back surface, and an interdigital transducer (IDT) on the front surface. The high acoustic velocity layer has a higher acoustic velocity than an acoustic velocity of the piezoelectric layer.

Acoustic resonators with high acoustic velocity layers

Filter devices and fabrication methods are disclosed. A filter device includes a piezoelectric plate and a conductor pattern on a front surface of the piezoelectric plate. The conductor pattern includes interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs) and a plurality of conductors connecting the plurality of XBARs in a ladder filter circuit architecture. The plurality of conductors includes a first conductor adjacent to a second conductor. An opening is provided through the piezoelectric plate between the first conductor and the second conductor.

Transversely-excited film bulk acoustic filters with excess piezoelectric material removed

Acoustic resonators, acoustic filter devices and methods of making the same are provided. An acoustic resonator device includes a piezoelectric layer having front and back surfaces, and an interdigital transducer (IDT) on a surface and including interleaved fingers. An overlapping distance of the interleaved fingers defines an aperture of the acoustic resonator device. The device further includes a fast region between the aperture and a busbar of the IDT. The piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode having a first frequency in the piezoelectric layer within a central portion of the aperture and a primary shear acoustic mode having a second frequency in the fast region. The second frequency is higher than the first frequency.

Transversely-excited film bulk acoustic resonators with structures to reduce acoustic energy leakage

Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.

Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a lithium niobate plate having front and back surfaces, wherein Euler angles of the lithium niobate plate are [0°, β, 0°], where β is greater than or equal to 0° and less than or equal to 60°, and an acoustic Bragg reflector between the surface of the substrate and the back surface of the lithium niobate plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. At least one finger of the IDT is disposed in a groove in the lithium niobate plate.

Transversely-excited acoustic resonator with Z-cut lithium niobate plate

There are disclosed acoustic resonators and radio frequency filter devices. A back surface of a single-crystal piezoelectric plate is attached to a surface of a substrate except for portions of the piezoelectric plate forming a plurality of diaphragms, each of which spans a respective cavity in the substrate. A conductor pattern is formed on the front surface, the conductor pattern including interdigital transducers (IDTs) of one or more pairs of sub-resonators, each pair consisting of two sub-resonators. The IDT of each sub-resonator includes interleaved fingers disposed on a respective diaphragm. The piezoelectric plate and the IDTs are configured such that respective radio frequency signals applied to each IDT excite respective shear primary acoustic modes in the respective diaphragms. The two sub-resonators of each pair of sub-resonators are positioned symmetrically about a central axis.

Transversely-excited film bulk acoustic filters with symmetric layout

Resonator devices are disclosed. An acoustic resonator device includes a piezoelectric plate having front and back surfaces, an acoustic Bragg reflector on the back surface, and an interdigital transducer (IDT) on the front surface. The acoustic Bragg reflector reflects a primary shear acoustic mode excited by the IDT in the piezoelectric plate over a frequency range including a resonance frequency and an anti-resonance frequency of the acoustic resonator device.

Solidly-mounted transversely-excited film bulk acoustic resonator

Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers.

XBAR resonators with non-rectangular diaphragms

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

Transversely-excited film bulk acoustic resonator with symmetric diaphragm

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a lithium niobate plate having front and back surfaces, wherein Euler angles of the lithium niobate plate are [0°, β, 0°], where β is greater than or equal to 0° and less than or equal to 60°. An interdigital transducer (IDT) is formed on the piezoelectric plate.

Transversely-excited film bulk acoustic resonator with recessed rotated-Y-X cut lithium niobate

Acoustic filters are disclosed. A filter device includes a plurality of resonators connected in a ladder filter circuit, each resonator of the plurality of resonators comprising an interdigital transducer (IDT) with interleaved fingers disposed on a respective piezoelectric diaphragm. A first frequency setting dielectric layer having a first thickness is disposed over the interleaved fingers of one or more IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the interleaved fingers of one or more IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.

Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers

A filter includes first and second shunt resonators, at least one series resonator connected to the first and second shunt resonators in a ladder filter circuit, and a first ground contact pad. The first shunt resonator has two or more first sub-resonators and the second shunt resonator has two or more second sub-resonators. At least one first sub-resonator and at least one, but less than all, of the two or more second sub-resonators are connected to the first ground contact pad.

Filter using transversely-excited film bulk acoustic resonators with inductively coupled sub-resonators

Filters and methods of making filters are disclosed. A filter device includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between a surface of the substrate and a back surface of the piezoelectric plate. A conductor pattern on a front surface of the piezoelectric plate includes interdigital transducers (IDTs) of a plurality of resonators and a plurality of conductors to connect the plurality of resonators in a ladder filter circuit, the plurality of conductors including adjacent first and second conductors. A portion of the piezoelectric plate between the first and second conductors is removed.

Growing community of inventors

Sofia, Bulgaria

Ventsislav Yantchev