Infineon Technologies Ag

Ventsislav Lachiev

Peter Irsigler

Thomas Grille

Bernhard Jakoby

Thomas Krotscheck Ostermann

Ursula Hedenig

Sokratis Sgouridis

Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.

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Gallneukirchen, Austria

Ventsislav Lachiev