Silterra Malaysia Sdn. Bhd.

Venkatesh Madhaven

Arjun Kumar Kantimahanti

Mohanraj Soundara Pandian

Wee Song Tay

Charlie Tay

Muniandy Shunmugam

Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.

Monolithic integrated device

A method for manufacturing a planarized reflective layer disposed on a hinge layer connected to a hinge support post () is disclosed. The method comprises depositing a first layer of a first material to form the hinge layer (), patterning a first mask over the first layer and selectively removing the first material not covered by any of the first mask to form a plurality of recesses, depositing a second layer of a second material over the first layer, patterning a second mask over the second layer and selectively removing the second material not covered by any of the second mask to form a hinge component (), depositing a reflective layer () of a reflective material over the second layer and planarizing the reflective layer () to form a substantially planar reflective surface.

Method for manufacturing a planarised reflective layer for micromirror devices

A method for fabricating a bottom oxide layer in a trench () is disclosed. The method comprises forming the trench () in a semiconductor substrate (), depositing an oxide layer to partially fill a field area () and the trench (), wherein said oxide layer has oxide overhang portions () and removing the oxide overhang portions () of the deposited oxide layer. Thereafter, the method comprises forming a bottom anti-reflective coating (BARC) layer () to cover the oxide layer in the field area () and the trench (), removing the BARC layer () from the field area (), while retaining a predetermined thickness of the BARC layer () in the trench (), removing the oxide layer from the field area () and removing the BARC layer and oxide layer in the trench () to obtain a predetermined thickness of the bottom oxide layer ().

Growing community of inventors

Kulim, Malaysia

Venkatesh Madhaven