General Electric Company

Gelcore, LLC

Venkatesan Manivannan

Alok Mani Srivastava

Holly Ann Comanzo

Anant Achyut Setlur

William Winder Beers

Jie Jerry Liu

Larry Neil Lewis

Jesse Berkley Tucker

James Anthony Cella

Venkat Subramaniam Venkataramani

Stanton Earl Weaver, Jr

Thomas Frederick Soules

Douglas Albagli

John Patrick Lemmon

Steven Jude Duclos

Deborah Ann Haitko

Peter Micah Sandvik

Vinayak Tilak

Clifford Bueno

David Mulford Shaddock

Laszlo Balazs

Thomas Paul Feist

James Neil Johnson

Jonathan Lloyd Male

Gopi Chandran Ramachandran

Tami Janene Faircloth

Mark Allen Woodmansee

Shankar Madras Venugopal

Stanley John Stoklosa

Abasifreke Udo Ebong

Katalin Toth

Mukunda Srinivas Adyam

Jiunn-Ru Jeffrey Huang

Michael Greci

Stephen Jude Duclos

Paul Alan Mc Connelee

Jie Liu

A fluorescent lamp including a phosphor layer including (YGd)AlO:EU, wherein 0.4&#x2266;x&#x2266;0.7 and 0&#x2266;y&#x2266;0.1, and at least one of each of a green and blue emitting phosphor. The resulting lamp will exhibit a white light having a color rendering index of preferably 90 or higher with a correlated color temperature of from 2500 to 10000 Kelvin. The use of (YGd)AlO:Euin phosphor blends of lamps results in high CRI light sources with increased stability and acceptable lumen maintenance over, the course of the lamp life.

Phosphor for high CRI lamps

In one embodiment the present invention discloses a method for making a first layer in an electroactive device comprising the steps of (i) preparing a composition by mixing at least one adhesion promoter material and at least one electroactive material; and (ii) depositing said composition onto a second electroactive layer of said electroactive device; and (iii) optionally further depositing a third electroactive layer onto the surface of said first layer opposite the second layer, wherein said composition enables adhesion between said first layer and said second layer or between said first layer and said third layer, or between said first layer and both said second layer and said third layer. In another embodiment the present invention discloses a method for improving adhesion between layers in an electroactive device comprising the steps of (i) depositing a surface treatment composition comprising at least one adhesion promoter material on at least one surface of a first electroactive layer, and (ii) depositing a second electroactive layer onto the surface of said first layer comprising said adhesion promoter; wherein said composition enables adhesion between said first layer and said second layer of said electroactive device. Electroactive layers and electroactive devices comprising said layers are also disclosed, as well as methods to make said electroactive devices. In another embodiment adhesion promoters comprising 9,9-disubstituted fluorenyl compounds are disclosed, as well as methods for making the same.

Adhesion promoter, electroactive layer and electroactive device comprising same, and method

An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

Imaging assembly and inspection method

A phosphor blend comprises at least two phosphors each selected from one of the groups of phosphors that absorb UV electromagnetic radiation and emit in a region of visible light. The phosphor blend can be applied to a discharge gas radiation source to produce light sources having high color rendering index. A phosphor blend is advantageously includes the phosphor (Tb,Y,LuLa,Gd)(Al,Ga)O:Ce, wherein x is in the range from about 2.8 to and including 3 and y is in the range from about 4 to and including 5.

Phosphor blends for high-CRI fluorescent lamps

A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.

Surface passivated photovoltaic devices

A quantum-splitting fluoride-based phosphor comprises gadolinium, at least a first alkali metal, and a rare-earth metal activator. The phosphor is made in a solid-state method without using HF gas. The phosphor can be used alone or in conjunction with other phosphors in light sources and displays wherein it can be excited by VUV radiation, and increases the efficiency of these devices.

Quantum-splitting fluoride-based phosphors, method of producing, and radiation sources incorporating same

A quantum-splitting phosphor has a formula of ADF:Pr, wherein A is at least one alkaline-earth metal and D is at least one Group-IIIB metal. The phosphor is made in a solid-state method without using hazardous HF gas. The phosphor can be used alone or in conjunction with other phosphors in light sources and displays wherein it can be excited by VUV radiation, and increase the efficiency of these devices.

Quantum-splitting fluoride-based phosphors, method of producing, and devices incorporating the same

A scintillator composition of a halide perovskite material of at least one ABXtype halide perovskite, at least one activator for the matrix material and optionally at least one charge compensator to assist the incorporation of the activator in the perovskite lattice and any reaction products thereof. Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation and method of producing an activated halide-perovskite based scintillator crystal.

Scintillator compositions, related processes, and articles of manufacture

A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

Phosphors containing boron and metals of Group IIIA and IIIB

A phosphor comprises a borate of terbium, at least an alkaline-earth metal, and at least a Group-3 metal. In one embodiment, the phosphor has a formula of A(DTb)(BO); wherein A is at least an alkaline-earth metal selected from the group consisting of calcium, barium, strontium, and magnesium; D is at least a Group-3 metal selected from the group consisting of lanthanum, scandium, and yttrium; and 0&#x3c;x&#x3c;0.5. The phosphor can be used in light sources such as those based on mercury discharge or light-emitting diodes and in displays.

Phosphors containing borate of terbium, alkaline-earth, and Group-3 metals, and light sources incorporating the same

A fluorescent lamp including a phosphor layer comprising a phosphor blend including four or more optimized phosphors emitting within a specific spectral range to optimize luminosity for a given color rendering index (CRI) and color coordinated temperature (CCT). The blend will include at least four phosphors selected from the following: a blue phosphor having an emission peak at 440&#x2013;490 nm, a blue-green phosphor having an emission peak at 475&#x2013;525 nm, a green phosphor having an emission peak at 515&#x2013;550 nm, an orange phosphor having an emission peak from 550&#x2013;600 nm, a deep red phosphor having an emission peak at 615&#x2013;665 nm, and a red phosphor having an emission peak at 600&#x2013;670 nm.

Optimized phosphor system for improved efficacy lighting sources

A phosphor comprises europium, at least two alkaline-earth metals, and at least a Group-13 metal. In one embodiment, the phosphor has a formula selected from the group consisting of SrAEuDOand SrAEuDO; wherein A is at least an alkaline-earth metal other than strontium; D is an element selected from the group consisting of Group-13 metals, group-3 metals, and rare-earth metals; 0&#x3c;a&#x3c;4; 0.001&#x3c;z&#x3c;0.3; and 4-a-z&#x3e;0. The phosphor can be used in light sources and displays.

Phosphors containing oxides of alkaline-earth and group-13 metals, and light sources incorporating the same

A phosphor comprises a material having a formula of ABO:Ce,Mn, wherein A is at least a rare-earth metal other than cerium. The phosphor can be used in light sources and displays.

Phosphors containing boron and rare-earth metals, and light sources incorporating the same

A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

Gas sensor device

A boron-containing phosphor comprises a material having a formula of ADEuBO, wherein A is an element selected from the group consisting of Ba, Sr, Ca, Mg, and combinations thereof; D is at least an element selected from the group consisting of rare-earth metals other than europium; and x is in the range from about 0.005 to about 0.5. The phosphor is used in a blend with other phosphors in a light source for generating visible light with a high color rendering index.

Growing community of inventors

Rexford, NY, United States of America

Venkatesan Manivannan