Applied Materials, Inc.

Venkatanarayana Shankaramurthy

Anton Baryshnikov

Brett Berens

Mitesh Sanghvi

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Jianhua Zhou

Kwangduk Douglas Lee

Hari K Ponnekanti

Prashant Kumar Kulshreshtha

Dale Robert Du Bois

Kalyanjit Ghosh

Jeongmin Lee

Paul Dennis Connors

Karthik Thimmavajjula Narasimha

Mohsin Waqar

Liliya Krivulina

Saptarshi Basu

Hiroyuki Ogiso

Rick Gilbert

Karthik Janakiraman

Rui Cheng

Zubin Huang

Diwakar N Kedlaya

Abhijit Ashok Kangude

Thorsten Kril

Shuang Liu

Peter Standish

Chahal Neema

Vishal Suresh Jamakhandi

Yi Yang

Paul Brillhart

Krishna Nittala

Satish Radhakrishnan

Badri N Ramamurthi

Aykut Aydin

Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

Systems and methods for substrate support temperature control

A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system. The recipe comprises iterations of a set of one or more processes, and wherein each iteration of the iterations is for depositing at least one layer of the layers. The method further includes determining changes to parameters for depositing the at least one layer on the substrate. Each of the changes corresponds to a respective iteration of the iterations and is associated with a relative position of a corresponding layer. The layers are to be deposited on one or more substrates based on the recipe and the changes.

Variable loop control feature

A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers, selectively controlling process fluid flow to the process chamber for a first period of time corresponding to a time value of the set of time values and to a divert foreline of the process chamber for a second period of time.

Process fluid path switching in recipe operations

Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

Controlling concentration profiles for deposited films using machine learning

A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers: causing the process fluid to flow to the processing chamber for a first period of time corresponding to a first time value; and causing the process fluid to flow to a divert foreline of the processing chamber for a second period of time, the second period of time being based on a timestep of the operation and the time value.

A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Loadlock integrated bevel etcher system

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San Jose, CA, United States of America

Venkatanarayana Shankaramurthy