Globalfoundries Inc.

Venkata Naga Ranjith Kumar Nelluri

Alban Zaka

Juergen Faul

El Mehdi Bazizi

Andrei Sidelnicov

Capacitive structures in the device level of sophisticated MOS devices may be formed so as to exhibit a significantly reduced capacitance/voltage variability. To this end, a highly doped semiconductor region may be formed in the 'channel' of the capacitive structure. For example, for a specified concentration of the dopant species and a specified range of the vertical dimension of the highly doped semiconductor region, a reduced variability of approximately 3% or less may be obtained for a voltage range of, for example, &#xb1;5 V.

Growing community of inventors

Dresden, Germany

Venkata Naga Ranjith Kumar Nelluri