Superpower, Inc.

University of Houston System

Other

University of Florida Research Foundation Inc

Ampeers LLC

Igc-Super Power, LLC

Venkat Selvamanickam

Goran Majkic

Hee-Gyoun Lee

Yi-Yuan Xie

Xuming Xiong

Srinivas Sathiraju

Yunfei Qiao

Allan Robert Knoll

Ying Gao

Pavel Dutta

Soumen Kar

Yijie Li

Ping Hou

Yimin Chen

Xun Zhang

Raghu Nath Bhattacharya

David P Norton

Jaroslaw Wosik

Maxim Martchevskii

Chandra Reis

Drew Willard Hazelton

Kenneth Patrick Lenseth

Jason Madison Duval

Yongkuan Li

Wenbo Luo

Anis Ben Yahia

Jerzy Krupka

Justin Waterman

Senthil Sambandam

Martin Weloth

Raymond D Judd

Michael T Gardner

Thomas Martin Salagaj

Chan Park

Kenneth P Lenseth

Maxim Marchevsky

Raghu N Bhattacharya

Drew W Hazelton

A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost.

Highly-textured thin films

A round superconductor wire, method for fabricating same, and method for detecting quench in the same are disclosed. A round superconductor wire includes a superconductor wire former and at least one superconductor tape wound on the superconductor wire former. Each superconductor tape includes a substrate, a buffer film stack overlying the substrate, and a superconductor film overlying the buffer film stack.

Hybrid round superconductor wires using Nb—Ti filaments

A method and apparatus for quality control of superconducting tapes, comprising non-destructive and non-contact methods for measuring the surface resistance of a superconducting tape during tape growth. The dielectric resonator techniques of the present invention can be adapted for measurements at the elevated temperatures used during annealing as well as at room and lower temperatures, providing the opportunity for real-time quality control of semiconductor tapes as they are being fabricated.

Method for production quality control of flexible superconducting tapes

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.

Ultra-thin film superconducting tapes

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMOelongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

Quality control of high performance superconductor tapes

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Methods and systems for fabricating high quality superconducting tapes

A round superconductor wire and method for fabricating same are disclosed. Embodiments are directed to a round superconductor wire including at least two superconductor tapes wound on a wire former. Each superconductor tape includes: bottom stabilizer and silver layers; substrate disposed above the bottom silver layer; buffer film stack disposed above the substrate; superconductor film disposed above the buffer film stack; top silver layer disposed above the superconductor film; and top stabilizer layer disposed above the top silver layer. At least one of the bottom stabilizer layer, bottom silver layer, substrate, buffer film stack, superconductor film, top silver layer, or top stabilizer layer is of a different width, thickness, or material composition in one of the superconductor tapes than in another of the superconductor tapes. These and other embodiments achieve a round superconductor wire having improved current density in high magnetic field applications when made in small diameters.

Round superconductor wires

A method and composition for doped HTS tapes having directional flux pinning and critical current.

Superconductor article with directional flux pinning

A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cmat 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cmat approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

Superconductor with improved flux pinning at low temperatures

A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm/Vs and carrier concentration of the epitaxial doped layer is less than 10cm.

High mobility silicon on flexible substrates

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMOelongated along an axis that is between 60&#xb0; to 90&#xb0; from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

A composition for a plurality of configurations of a high-temperature superconductor tape including a superconducting film disposed on a compliant film or sandwiched or captured between at least one pair of compliant film layers.

Superconducting article with compliant layers

Growing community of inventors

Wynantskill, NY, United States of America

Venkat Selvamanickam