Qualcomm Incorporated

Venkat Narayanan

De Lu

Rui Li

Venugopal Boynapalli

Ramaprasath Vilangudipitchai

Rakesh Vattikonda

Samrat Sinharoy

Rui Chen

David Anthony Kidd

Seid Hadi Rasouli

Giby Samson

Kevin Bowles

Qi Ye

Dorav Kumar

Bilal Zafar

Manish Srivastava

Min Chen

Masoud Zamani

Samy Shafik Tawfik Zaynoun

Divya Gangadharan

Saravanan Marimuthu

Peeyush Kumar Parkar

Srivatsan Chellappa

Baldeo Sharan Sharma

Amit Patil

Chirag Maheshwari

At least one integrated power management cell of an IC includes a first cell, which is a 4-height cell, that includes a first continuous n-well, a first power interconnect coupled to a first voltage source associated with a first voltage domain and to the first continuous n-well, a second continuous n-well, a second power interconnect coupled to a second voltage source associated with a second voltage domain and to the second continuous n-well, a first subset of a first voltage level shifter associated with the first voltage domain and coupled to the first power interconnect, and a second subset of the first voltage level shifter associated with the second voltage domain and coupled to the second power interconnect.

Integrated power management cells for gate all around technologies

In certain aspects, an apparatus includes a first gating circuit having an input and an output, wherein the input of the first gating circuit is configured to receive a first clock signal. The apparatus also includes a delay circuit having an input and an output, wherein the input of the delay circuit is coupled to the output of the first gating circuit. The apparatus further includes a control circuit configured to receive an enable signal, detect a logic state at the output of the delay circuit, and cause the first gating circuit to pass or gate the first clock signal based on the enable signal and the detected logic state at the output of the delay circuit.

Anti-aging clock source multiplexing

Aspects of the disclosure are directed to sensing integrated circuit (IC) Back End Of Line (BEOL) process corners. In one aspect, an apparatus for sensing IC BEOL process corners includes a ring oscillator including a plurality of ring oscillator stages configured to generate an output waveform with a frequency state; and a shield net circuit including a plurality of shield net stages corresponding to the plurality of ring oscillator stages, the shield net circuit having a toggle input. And, a method includes generating an output waveform with a frequency state using a ring oscillator that includes a plurality of ring oscillator stages; modifying a plurality of ring oscillator stage time delays through a coupling between a plurality of shield net stages and the plurality of ring oscillator stages; and selecting the frequency state using a toggle input of a shield net circuit which includes the plurality of shield net stages.

Back end of line (BEOL) process corner sensing

An aspect of the disclosure relates to a latch array, including: a first set of master latches including a first set of clock inputs configured to receive a master clock, a first set of data inputs configured to receive a first set of data, and a first set of data outputs coupled to a set of bitlines, respectively; a second set of master latches including a second set of clock inputs configured to receive the master clock, a first set of write-bit inputs configured to receive a set of write-bit signals, and a set of write-bit outputs coupled to a set of write-bit lines, respectively; and an array of slave latches, wherein the slave latches in columns of the array include a second set of data inputs coupled to the set of bitlines, and a second set of write-bit inputs coupled to the set of write-bit lines, respectively.

Latch array with mask-write functionality

A latch array including a row of master latches coupled to columns of slave latches. Each master latch includes an OR-AND-Inverter (OAI) gate cross-coupled with a NAND gate to receive and latch an input data, and each slave latch includes an AND-OR-Inverter (AOI) gate cross-coupled with a NOR gate to receive and latch the data from the master latch, and an inverter including an input coupled to the AOI gate and an output to produce an output data based on the input data. Alternatively, each master latch includes an AND-OR-Inverter (AOI) gate cross-coupled with a NOR gate to receive and latch an input data, and each slave latch includes an OR-AND-Inverter (OAI) gate cross-coupled with a NAND gate to receive and latch the data from the master latch, and an inverter including an input coupled to the OAI gate and an output to produce an output data.

True single phase clock (TSPC) based latch array

A true random number generator (TRNG) for generating a sequence of random numbers of bits is disclosed. The TRNG includes a TRNG cell configured to generate a sequence of bits logically alternating with a mean frequency and with substantially random period jitter; a period monitor configured to generate a first sequence of random bits based on a set of periods of the sequence of logically alternating bits; and a sampling circuit configured to sample the first sequence of random bits in response to a sampling clock to generate a second sequence of random bits.

True random number generator based on period jitter

A flip-flop is provided that includes a sense-amplifier-based master latch clocked by a first edge of a delayed version of a clock signal. A slave latch includes a cross-coupled pair of logic gates for latching a data output signal responsive to a second edge of the clock signal.

High-speed soft-edge sense-amplifier-based flip-flop

The apparatus provided includes a memory. The memory is configured to receive a memory clock. The apparatus also includes a single stage logic gate configured to generate the memory clock from a reference clock. The memory clock is a gated clock. Additionally, the memory clock has a wider pulse width than the reference clock. In an example, the single stage logic gate comprises a pull-up circuit configured to pull-up the memory clock, and a pull-down circuit coupled to pull-down the memory clock. In an example, the pull-up and the pull-down circuits are configured to be controlled by the reference clock, a delayed reference clock, and a gating signal. An example further includes a delay circuit configured to generate the delayed reference clock from the reference clock. An example further includes a latch configured to generate the gating signal.

Pulse-stretcher clock generator circuit for high speed memory subsystems

In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.

High speed voltage level shifter

In one embodiment, a voltage level shifter includes a first NOR gate having a first input configured to receive a first input signal in a first power domain, a second input configured to receive an enable signal in a second power domain, a third input, and an output. The voltage level shifter also includes a second NOR gate having a first input configured to receive a second input signal in the first power domain, a second input configured to receive the enable signal in the second power domain, a third input coupled to the output of the first NOR gate, and an output coupled to the third input of the first NOR gate. The first and second NOR gates are powered by a supply voltage of the second power domain.

Growing community of inventors

San Diego, CA, United States of America

Venkat Narayanan