Oxford Instruments Analytical Oy

Oxford Instruments Technologies Oy

Veikko Kämäräinen

Pasi Antero Kostamo

Hans Andersson

Seppo Nenonen

A semiconductor radiation detector comprises a detector chip having a front side and a back side, and a support plate on the back side of the detector chip, having electric connections with said detector chip. A base plate has a thermoelectric cooler attached to it and contact pins protruding from the base plate towards said detector chip. A bonding plate is on an opposite side of said thermoelectric cooler than said base plate, and first wire bonded connections go between said contact pins and said bonding plate. A joint plate is between said bonding plate and said support plate, and electric connections between said support plate and said bonding plate go through said joint plate.

Semiconductor radiation detector with large active area, and method for its manufacture

A semiconductor detector head comprises a detector chip having a front side and a back side, and a substrate on the back side of said detector chip. Contact points are located on at least one of said substrate and said detector chip. A first set of contact pins protrude on an opposite side of said substrate than said detector chip. At least one of the contact pins of said first set is conductively coupled to at least one of said contact points. A base plate holds a second set of contact pins that protrude from said base plate towards the contact pins of said first set. Electric connections are made between matching pairs of contact pins of said first and second sets.

Semiconductor detector head and a method for manufacturing the same

A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.

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Veikko Kämäräinen