International Business Machines Corporation

Veeraraghaven S Basker

Hariklia Deligianni

John Ulrich Knickerbocker

Christian Lavoie

John Michael Cotte

James John Kelly

Balasubramanian S Pranatharthi Haran

George Gabriel Totir

Keith Thomas Kwietniak

Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.

Methods for fabricating silicon carriers with conductive through-vias with low stress and low defect density

Silicide formation processes are disclosed that use an electrochemical displacement reaction in the absence of an externally applied current or potential. In an embodiment, a method for forming an integrated circuit comprises: depositing a metallic material upon select areas of a semiconductor topography comprising silicon by contacting the semiconductor topography with an aqueous solution comprising an acid and a metal salt to cause an electrochemical displacement reaction in the absence of an externally applied current or potential, wherein a concentration of the metal salt in the aqueous solution is about 0.01 millimolar to about 0.5 millimolar; and annealing the metallic material to form a silicide upon the areas of the semiconductor topography comprising the silicon.

Selective silicide formation by electrodeposit displacement reaction

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Albany, NY, United States of America

Veeraraghaven S Basker