Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

Vasyl Motsnyi

Luc Haspeslagh

Bernardette Kunert

Marleen Van Hove

Robert Langer

Brice De Jaeger

Philippe Soussan

Stefano Guerrieri

Celso Cavaco

Olga Syshchyk

The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

Method of forming a semiconductor device structure

A method for fabricating Complementary Metal Oxide Semiconductor (CMOS) compatible contact layers in semiconductor devices is disclosed. In one embodiment, a nickel (Ni) layer is deposited on a p-type gallium nitride (GaN) layer of a GaN based structure. Further, the GaN based structure is thermally treated at a temperature range of 350&#xb0; C. to 500&#xb0; C. Furthermore, the Ni layer is removed using an etchant. Additionally, a CMOS compatible contact layer is deposited on the p-type GaN layer, upon removal of the Ni layer.

Method for fabricating CMOS compatible contact layers in semiconductor devices

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Leuven, Belgium

Vasyl Motsnyi