Springworks, LLC

Infinite Power Solutions, Inc.

Symmorphix, Inc.

Vassiliki Milonopoulou

Richard Ernest Demaray

Bernd J Neudecker

Hongmei Zhang

Mukundan Narasimhan

Hong Mei Zhang

A method of forming a lithium orthophosphate sputter target or tile and resulting target material is presented. The target is fabricated from a pure lithium orthophosphate powder refined to a fine powder grain size. After steps of consolidation into a ceramic body, packaging and degassing, the ceramic body is densified to high density, and transformed into a stable single phase of pure lithium orthophosphate under sealed atmosphere. The lithium orthophosphate target is comprised of a single phase, and can preferably have a phase purity greater than 95% and a density of greater than 95%.

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High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TiOwherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides

Formation of a zirconia based thermal barrier layer is described. In accordance with the present invention, a thermal barrier layer composed of zirconia or an allow of zirconia is presented. An advantageous layer might be composed of zirconia or an alloy of zirconia with silica having improved properties. In some embodiments, such a zirconia layer might be deposited with a fraction of it's zirconia in a metallic state. Such a fraction, particularly if it were very low, would act to nucleate crystalline grains of silicon during the recrystallization phase of excimer laser melting due to the formation of point defects of zirconium silicide or other nucleating compound or formation. Heat treating the Zirconia layer anneals the Zirconia layer so that it can act as a gate oxide.

Low temperature zirconia based thermal barrier layer by PVD

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San Jose, CA, United States of America

Vassiliki Milonopoulou