Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Electro-mechanics Co., Ltd.

Samsung Mobile Display Co., Ltd.

Vassili Leniachine

Mi-jeong Song

Hyun-Soo Kim

Mu-Gyeom Kim

Sang-Yeol Kim

Yoon-Ho Khang

Jeong-wook Lee

Dong-seok Suh

Jin-seo Noh

Suk-ho Yoon

Gi-Young Kim

Seung-hyun Son

Hidekazu Hatanaka

Hyoung-bin Park

Young-Mo Kim

Sang-hun Jang

Ji Sick Hwang

Gil Hyoung Cho

Nikolai Shpackovsky

Hyo-june Kim

Nikolai Shpakovsky

Hyo June Kim

In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

Phase change memory devices and fabrication methods thereof

An organic light emitting device can includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.

Organic light emitting device and method of manufacturing the same

A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle &#x3b1; (35&#xb0;&#x2266;&#x3b1;&#x2266;90&#xb0;) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle &#x3b2; (35&#xb0;&#x2266;&#x3b2;&#x2266;&#x3b1;) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle &#x3b3; (20&#xb0;&#x2266;&#x3b3;&#x2266;&#x3b2;) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

Light emitting diode and method of fabricating the same

A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle &#x3b1; (35&#xb0;&#x2266;&#x3b1;&#x2266;90&#xb0;) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle &#x3b2; (35&#xb0;&#x2266;&#x3b2;&#x2266;&#x3b1;) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle &#x3b3; (20&#xb0;&#x2266;&#x3b3;&#x3c;&#x3b2;) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

An organic light emitting device includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.

Organic light emitting device having metal electrodes in a groove with steps in a substrate

A plasma display panel (PDP) and a method of manufacturing the panel includes sustain electrodes having a double gap structure and a predetermined resistance value. Each of the sustain electrodes includes a main electrode for sustaining a discharge and an auxiliary electrode for starting a low-voltage discharge without decreasing efficiency. A gap between auxiliary electrodes included in different sustain electrodes, respectively, is narrower than a gap between the different sustain electrodes. Each auxiliary electrode is formed between barrier ribs or immediately above a barrier rib. A ditch is formed in a dielectric layer covering the main electrodes and the auxiliary electrodes. The ditch is formed immediately above an auxiliary electrode.

Plasma display panel including sustain electrodes having double gap and method of manufacturing the panel

An ice maker is capable of efficiently making and removing ice cubes. The ice maker includes first and second pulleys which are installed to be spaced apart from each other. A drive unit rotates the first and second pulleys. An ice making conveyor is wrapped around the first and second pulleys, and has a plurality of ice making parts which are concavely formed to contain water therein. An ice storage tray is provided under the ice making conveyor to store ice cubes dropping from the ice making parts. An ice level sensing unit functions to sense a level of the ice cubes stored in the ice storage tray, thus shutting off electricity. When the level of the ice cubes stored in the ice storage tray exceeds a predetermined level, an operation of the ice maker is stopped, thus preventing an excessive number of ice cubes from being stored in the ice storage tray.

Ice maker

Growing community of inventors

Suwon-si, South Korea

Vassili Leniachine