Beneq Oy

Air Products and Chemicals, Inc.

Soitec

Vasil Vorsa

Pekka T Soininen

Andrew David Johnson

Mohammad Ameen

Michael Albert Tischler

Manchao Xiao

Chantal Arena

Christiaan J Werkhoven

Ronald Thomas Bertram, Jr

Pekka J Soininen

The invention relates to a method for fabricating a plasma etch-resistant film () on a surface of a substrate (), wherein the method comprises the step of forming a film comprising an intermediate layer () of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer () of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

Plasma etch-resistant film and a method for its fabrication

The invention relates to a method for fabricating a plasma etch-resistant film () on a surface of a substrate (), wherein the method comprises the step of forming a film comprising an intermediate layer () of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer () of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RRN]SiR(R), where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, Rand Rcan be hydrogen, Cto Calkane, alkene, or Cto Caromatic; each Ris a vinyl, allyl or vinyl-containing functional group.

Amino vinylsilane precursors for stressed SiN films

A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

UV absorption based monitor and control of chloride gas stream

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Coopersburg, PA, United States of America

Vasil Vorsa