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Dow Silicones Corporation

Ddp Specialty Electronic Materials US 9, LLC

Vasgen Aram Shamamian

Xiaobing Zhou

Brian David Rekken

Byung Keun Hwang

Noel Mower Chang

Xianghuai Wang

Susan Victoria Perz

Ludmil M Zambov

Jeffrey Alan Seifferly

Xianghuai William Wang

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si&#x2014;Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein.

Thio(di)silanes

Thio(di)silanes comprising a thiosilane of formula (A): (RRRCS)(Si)XH(A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (RRRCS)(RN)(Si&#x2014;Si)XH(I) wherein subscript s is from 1 to 6, and wherein R, R, R, R, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

The present invention provides a method of forming a flexible dichroic optical filter. The method comprises depositing a plurality of pairs of layers adjacent a substrate. Each of the plurality of pairs of layers includes a first layer formed of a silicon-and-carbon containing material having a first index of refraction and a second layer formed of a silicon-and-carbon containing material having a second index of refraction that is different than the first index of refraction.

Dichroic filters formed using silicon carbide based layers

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Midland, MI, United States of America

Vasgen Aram Shamamian