Freescale Semiconductor,inc.

Nxp Usa, Inc.

Varughese Mathew

Sheila F Chopin

Sam S Garcia

Ritwik Chatterjee

Leo M Higgins, Iii

Eddie Acosta

Chu-Chung Lee

Burton Jesse Carpenter

Scott S Roth

Nishant Lakhera

Akhilesh Kumar Singh

Thomas H Koschmieder

Min Ding

Lynne M Michaelson

Steven M Hues

Michael L Lovejoy

Edward Acosta

Leo Mathew

Rama I Hegde

Douglas G Mitchell

Tushar Praful Merchant

Stanley Michael Filipiak

Scott K Pozder

Tu-Anh N Tran

Lakshmi Narayan Ramanathan

Navas Khan Oratti Kalandar

James R Guajardo

Eddic Acosta

Christopher M Prindle

The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.

Surface finish for wirebonding

The present disclosure provides for embodiments of packaged semiconductor devices. In one embodiment, a packaged semiconductor device for a die includes an exposed structure. The die has an active surface and a backside surface opposite the active surface. A first surface of the exposed structure is joined to die attach material, and the die attach material is further joined to the backside surface of the die. The exposed structure includes a plurality of openings through the exposed structure within a perimeter of the die, and the die is exposed through the plurality of openings.

Semiconductor device attached to an exposed pad

A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.

Semiconductor structure with sacrificial anode and method for forming

A semiconductor device includes a leadframe having a flag and a plurality of bond terminals. A semiconductor die is attached to the leadframe at the flag. A bond pad is formed on the semiconductor die. A top surface layer of the bond pad includes copper having a predetermined grain orientation. A bond wire includes a first end and a second end. The bond wire is attached to the bond pad at the first end and attached to one of the bond terminals in the plurality at the second end.

Bond pad structure for semiconductor device packaging

A packaged semiconductor device includes a substrate, an electronic device coupled to the substrate, encapsulant including a first major surface surrounding the electronic device, and an oxygen barrier layer within fifty percent of a thickness of the encapsulant from a second major surface of the encapsulant. The oxygen barrier covers at least a portion of an area of the second major surface of the encapsulant to help reduce or eliminate warping of the encapsulant and/or the substrate of the packaged semiconductor device due to oxidation. A thickness of the oxygen barrier layer is less than 100 microns.

Structure and method to minimize warpage of packaged semiconductor devices

A method of manufacturing a packaged semiconductor device includes patterning and plating silver nanoparticles in bonding areas of a lead frame, forming a hydrophilic group while oxidizing the silver nanoparticles, forming wire bonds on the silver nanoparticles, and encapsulating the wire bonds and the silver nanoparticles.

Packaged semiconductor device with a lead frame and method for forming

A semiconductor structure includes a lead frame having a flag and a plurality of leads, a semiconductor die attached to a first major surface of the flag, and a plurality of re-routed lead fingers attached to the lead frame. The plurality of leads has a first pitch. The first end of each re-routed lead finger is attached to a lead of the plurality of leads. Each re-routed lead finger extends over the semiconductor die such that a second end of each re-routed lead finger is over and spaced apart from the flag of the lead frame. The second ends of the plurality of re-routed lead fingers has a second pitch different from the first pitch.

Apparatus and methods for stackable packaging

A device includes an integrated circuit (IC) carrier for a semiconductor device, and a coating on the IC carrier. In the presence of an electrical field or a magnetic field, the coating includes a first functional group that attracts anions and a second functional group that attracts cations.

Integrated circuit carrier coating

A method of forming an electronic component includes masking a lead frame to form a mask defining an exposed area, oxidizing the exposed area of the lead frame, wherein the mask inhibits oxidation of an unexposed area, and removing the mask from the lead frame following oxidizing. A lead frame can include a metal sheet patterned to define a pad region and leads. The metal sheet includes metal oxide in a select area. The pad region is substantially free of metal oxide.

System and method for lead frame package degating

Semiconductor structure with sacrificial anode and passivation layer and method for forming

A packaged electronic device including an electronic device, a conductive structure, and an encapsulant. The encapsulant has chlorides and a negatively-charged corrosion inhibitor for preventing corrosion of the conductive structure.

Encapsulant with corrosion inhibitor

A mold compound is provided for encapsulating a semiconductor device (). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Encapsulant for a semiconductor device

A method of making a package substrate having a copper bond pad and a location for receiving a semiconductor die having a remnant of one of a group consisting of HEDP and an HEDP derivative on a top surface of the copper bond pad. The semiconductor die is attached to the substrate. A wirebond connection is attached between the remnant and the semiconductor die.

Method for treating a bond pad of a package substrate

A technique for testing the compatibility of an encapsulation material and a wire bond included at an unencapsulated assembly. The technique includes immersing the assembly in an encapsulating compound extract. The assembly includes a semiconductor die and a bonding wire affixed to a metalized pad of the semiconductor die by the wire bond. After the immersing, a mechanical strength of the wire bond is determined.

Growing community of inventors

Austin, TX, United States of America

Varughese Mathew