Advanced Micro Devices Corporation

Van Le

Donald L Friede

Denver L Dolman

A system for measuring thicknesses of a layered workpiece in a silicon integrated circuit manufacturing process. The system includes means for measuring a resistivity of said workpiece, such as an M-Gage; means for transforming a first signal set output by said means for measuring to a second signal set; and means for determining thicknesses of said workpiece layers from said resistivity capable of interpreting the second signal set. The means for transforming includes an interface board. The interface board receives the first signal set and emits the second signal set for receipt by the means for determining when an appropriate signal is received from the means for determining. [The interface board includes four inputs, first resistors connecting each of the inputs, transistors, each having a base, a collector, and an emitter, connecting each of the first resistors at the bases of the transistors, ground connecting each of the transistors at the emitters of the transistors, inverters and second resistors connecting each of the transistors at the collectors of the transistors, the second resistors each connecting a voltage source, one of the transistors connecting at the collector of the transistor a second inverter, the second inverter connecting a flip-flop, and the flip-flop connecting a second voltage source.] The interface board connects with an input/output interface card of a computer.

M-Gage data acquisition system and method

An improved ion implant device is provided having programmable and graphical user interface. The ion implant device can be accessed by a remote computer such as an IBM.RTM.-compatible PC/XT/AT personal computer to allow an operator to access, control and monitor the implant device from a remote location. Various control signals associated with implant operation can be changed or modified according to implant parameters stored within the computer. Each time a wafer lot is to be processed, the implant parameters can be quickly retrieved from the computer and read to the implant device with minimum operator error. Likewise, various implant parameters and/or implanter settings can be written to the computer and stored within the computer's memory. The computer can be easily interfaced or retrofitted to existing implant devices with only a minimum amount of necessary software code and associated hardware.

Apparatus and method for monitoring and controlling an ion implant device

An ion implanter is provided having a modulator which provides a variable frequency modulated scan signal. The modulator ensures that the scan signal will not retrace substantially upon itself during a scan cycle, and during subsequent scan cycles. Minimization of retrace allows for a more uniform dopant placed across the upper surface of the wafer and thereby eliminates or minimizes underdoping areas often arising between retraced beam widths when heavy atomic species are implanted.

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Austin, TX, United States of America

Van Le