Tini Alloy Company

Stryker Corporation

Stryker Nv Operations Limited

Other

Valery V Martynov

A David Johnson

Vikas Gupta

Michael D Bokaie

Alfred David Johnson

Arani Bose

Roger Graham Gilbertson

Leticia Menchaca

Vikas Galhotra

Letecia Menchaca

A Davis Johnson

George R Gray

A temperature-activated valve for a conventional fire sprinkler utilizing a hyperelastic single-crystal shape memory alloy is described. The shape-memory element expands as it is heated, forcing a bolt to break, thereby opening the sprinkler valve. The devices described are less susceptible to accidental breakage than conventional actuators, and have fewer moving parts. Transition temperature of the shape memory alloy can be tuned to a narrow range.

Frangible shape memory alloy fire sprinkler valve actuator

A temperature-activated valve for a conventional fire sprinkler utilizing a hyperelastic single-crystal shape memory alloy is described. The shape-memory element expands as it is heated, forcing a bolt to break, thereby opening the sprinkler valve. The shape memory element typically communicates with the valve so as to force it open. The devices described are less susceptible to accidental breakage than conventional actuators, and have fewer moving parts. Transition temperature of the shape memory alloy can be tuned to a narrow range.

Sprinkler valve with active actuation

A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Abelow 37&#xb0; C.; and demonstrating a stress/strain recovery greater than 3% at 37&#xb0; C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

Thin-film shape memory alloy device and method

Shape-setting methods for fabricating devices made of single crystal shape memory alloys. The method include drawing a single crystal of a shape memory alloy from a melt of the alloy. This is followed by heating and quenching the crystal sufficiently rapid to limit the formation of alloy precipitates to an amount which retains hyperelastic composition and properties of the crystal.

Hyperelastic shape setting devices and fabrication methods

Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as 'hyperelastic' SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu&#x2014;Al&#x2014;X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.

Single crystal shape memory alloy devices and methods

A device and method for holding or clamping components together, and with the clamping being selectively loosened to permit the components to move through a predetermined distance without being fully released. A bolt has its head end attached to one component and its threaded end attached to the other component. A portion of the bolt's shank is formed with a necked-down portion. An actuator of shape memory alloy material is mounted about the bolt. When energized by heat, the actuator expands and exerts a great force which stretches the bolt, permanently deforming the bolt. This enables limited movement of the components while still restraining them from separating.

Non-explosive releasable coupling device

A microrelay device formed on a silicon substrate wafer for use in opening and closing a current path in a circuit. A pair of electrically conducting latching beams are attached at their proximal ends to terminals on the substrate. Proximal ends of the beams have complementary shapes which releasably fit together to latch the beams and close the circuit. A pair of shape memory alloy actuators are selectively operated to change shapes which bend one of the beams in a direction which latches the distal ends, or bend the other beam to release the distal ends and open the circuit. The microrelay is bistable in its two positions, and power to the actuators is applied only for switching it open or closed.

Thin film shape memory alloy actuated microrelay

Contraceptive intrauterine devices made of thin film shape memory alloy materials. The devices are formed in three-dimensional shapes which contact uterus tissue of a human or other mammal to prevent conception. In certain embodiments, structural features such as tails, fenestrations, ridges or grooves are formed on the devices to enhance the contraceptive effect.

Thin film intrauterine device

Methods for making thin film multiple layered three-dimensional devices using two-dimensional MEMS techniques for use in a variety of applications including endovascular, endolumenal, intracranial, and intraocular medical applications. In the general method, a thin film first layer of the device material is deposited over a release layer which in turn is deposited on a substrate. An other release layer is deposited on the first device layer, with portions of the other release layer removed, leaving a pattern in the first device layer. In a similar manner a second layer of device material is formed in a pattern overlying the first device layer with portions of the two layers joined together leaving a portion of the release layer between them. The two release layers are removed and the first and second layers of the device material are formed into a three-dimensional shape suitable for the desired end-use application.

Three dimensional thin film devices and methods of fabrication

A method of fabricating ternary TiNi-based alloys to achieve substantially higher phase-change transition temperatures in the resulting SMA materials and which have optimal thermo-mechanical properties. One target is provided which comprises the element Ti, a second target comprises the element Ni and a third target comprises an element which when combined with Ti and Ni can produce a shape memory alloy. The three targets are co-sputtered onto a substrate at rates which are controlled so that the sum of the percentage composition of the elements that are from the left side of the periodic table are substantially 50 atomic percent, and the sum of percentage composition of the elements that are from the right side of the periodic table comprise the remaining 50 atomic percent.

Methods of fabricating high transition temperature SMA, and SMA materials made by the methods

A method of measuring with high accuracy the composition of shape memory alloy elements that are sputter deposited in thin film form. An element of known composition is polished with a flat surface. An element of unknown composition is sputter deposited onto the surface. Miniature openings are made by photography in the unknown layer, exposing an area of the known substrate. With adjacent areas of the two samples then only microns apart, accurate measurements of the compositions are made by comparing the X-ray spectra resulting from an electron beam scanning across the two areas.

Method of accurately measuring compositions of thin film shape memory alloys

A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature A below 37&deg; C.; and demonstrating a stress/strain recovery greater than 3% at 37&deg; C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

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San Francisco, CA, United States of America

Valery V Martynov