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Micron Technology Incorporated

Valeria Intini

Rino Micheloni

Alessia Marelli

Roberto Ravasio

A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A, A, . . . , ALS-) to generate a first recovered string (S), and performing a first decoding attempt using the first recovered string (S). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S-SN) is generated. On the basis of a comparison between the first recovered string (S) and the second recovered string (S-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).

Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code

A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A, A, . . . , ALS&#x2212;) to generate a first recovered string (S), and performing a first decoding attempt using the first recovered string (S). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S-SN) is generated. On the basis of a comparison between the first recovered string (S) and the second recovered string (S-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).

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Putignano, Italy

Valeria Intini