X-fab Semiconductor Foundries Ag

X-fab Semiconductor Foundries Gmbh

Valeri Ivanov

Hartmut Liebing

Rumen Rachinsky

Aleksandar Radev

A programmable memory device. The device comprises at least four memory cells, each cell comprising a data storage element connected to a switching element. The device is arranged such that each switching element is connected to at least two selection lines for selecting of at least one of the at least four memory cells. At least one of the four memory cells is selectable by applying a voltage to at least one of the at least two selection lines, such that at least two switching elements share one of the at least two selection lines and one of the at least two switching elements shares another one of the at least two selection lines with another switching element and such that each data storage element is connected to a shared data line for applying a programming or reading voltage to each storage element of the at least four memory cells to allow for programming or reading of the selected memory cell.

Programmable read-only memory having at least four memory cells, each having switching element and data storage element arranged so that each switching element is connected to at least two selection lines and the storage elements are shared by a data line

The invention concerns semiconductor latches capable of memorizing any programmed information even after power supply has been removed. Used is a &#x3bc;m BiCMOS EPROM process but it is applicable in any other process having hot electron injection devices like EPROM, Flash EEPROM. Suggested is a bi-stable latch circuit having a pair of cross-coupled branches (I,II), each branch including a complementary driver and a load connected between a drain line and a source line and a non-volatile memory cell having a program transistor and a read transistor, at least one of said drivers and loads including said read transistor, said driver and load of said branch connected in series at a respective output node, said read transistor and program transistor having a common floating gate and separate control gates, said control gate of said program transistor connected to a program voltage, the drain of said program transistor connected to a respective input node, said control gate of said read transistor in said branch connected to said output node of the other branch (II).

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Sofia, Bulgaria

Valeri Ivanov