Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Infineon Technologies Austria Ag

Valentyn Solomko

Winfried Bakalski

Semen Syroiezhin

Andrea Cattaneo

Ruediger Bauder

Nikolay Ilkov

Bernd Schleicher

Hans Taddiken

Anton Steltenpohl

Anthony Thomas

Christoph Kadow

Henning Feick

Daniel Kehrer

Uwe Seidel

Werner Simbuerger

Dominik Heiss

Christian Butschkow

Danial Tayari

Chau Fatt Chiang

Swee Kah Lee

Chee Yang Ng

Kok Yau Chua

Michael Wilhelm

Andreas Wickmann

Ivan Jevtic

Hans-Peter Friedrich

Matthias Voelkel

Carsten Ahrens

Hans-Dieter Wohlmuth

Jochen Essel

Oguzhan Oezdamar

Aleksey Zolotarevskyi

Johannes Klaus Rimmelspacher

Pablo Araujo Do Nascimento

Andreas Bänisch

Mirko Scholz

Jake Greene

Bogdan-Nicolae Tanc

Viktor Gerber

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Methods and devices related to radio frequency devices

An RF switch arrangement includes a shunt switch having a first RF terminal, a second RF terminal coupled to ground, a main control input, and an acceleration control input; a series switch having a first RF terminal coupled to the first RF terminal of the shunt switch, a second RF terminal, a main control input, and an acceleration control input; and a switching time acceleration circuit having a positive acceleration path input, a negative acceleration path input, and a first output coupled to the main control input of the series switch.

RF series switch arrangement with switching time acceleration

A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

RF switch with switching time acceleration

A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

RF switch with compensation and gate bootstrapping

An RF switch device includes transistors coupled in series to form a current path; a drain-source resistive bias network coupled to a drain and a source of each transistor; and a discharge switch coupled between a gate of at least one transistor and the drain-source resistive bias network, wherein the discharge switch establishes a current path between the gate of the at least one transistor and the drain-source resistive bias network only during a switching transient of the RF switch device.

MOSFET-based RF switch with charge reduction

An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.

MOSFET-based RF switch with improved ESD robustness

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

An RF switch includes serially coupled RF cells coupled between a first switch node and a second switch node, wherein each of the serially coupled RF cells include at least one transistor; and a varactor circuit coupled to at least one node of a transistor in an RF cell, and coupled between the RF cell and an adjacent RF cell, wherein the varactor circuit is configured for equalizing a voltage of the RF cell and a voltage of the adjacent RF cell during an off mode of the RF switch.

RF-switch with enhanced voltage robustness

A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

RF switch with compensation

A radio-frequency system includes an impedance tuning network having a plurality of selectable impedance states and a first port for coupling to a complex load impedance, a detector coupled to a second port of the impedance tuning network and configured to measure scalar values of reflection coefficients at the second port, and a controller configured to, for a first radio-frequency band, sequentially tune the impedance tuning network to at least three different impedance states in each of which the detector measures a scalar value of a corresponding reflection coefficient at the second port, and estimates a value of the complex load impedance based on the scalar values measured by the detector.

RF impedance measurement and tuning system

A device includes a switching unit including N input ports and M output ports, wherein N&#x2265;M&#x2265;2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.

Device including a switching unit and applications thereof

A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

RF switch

Growing community of inventors

Munich, Germany

Valentyn Solomko