Applied Materials, Inc.

Other

Valentin Nikolov Todorow

John Patrick Holland

Alexander Miller Paterson

Michael D Willwerth

Samer Banna

Kartik Ramaswamy

Dan Katz

Gary Leray

Michael S Barnes

Edward P Hammond

David Palagashvili

Brian K Hatcher

James Rogers

Yue Guo

Rajinder Dhindsa

Andrew Nguyen

Leonid Dorf

Olivier Luere

Theodoros Panagopoulos

Daniel Sang Byun

Evgeny Kamenetskiy

Stephen Yuen

Shahid Rauf

Alexander Matyushkin

Linying Cui

Alex Paterson

Martin Jeffrey Salinas

Imad Yousif

Shashank C Deshmukh

Tae Won Kim

Kyeong-Tae Lee

Rodolfo Belen

Hiroji Hanawa

Thai Cheng Chua

Zhigang Chen

Ajit Balakrishna

Patricia M Liu

Vladimir Knyazik

Kyle Tantiwong

Tatsuya E Sato

Xing Lin

Aniruddha Pal

Waheb Bishara

Steven C Hung

Anchel Sheyner

Victor H Calderon

Albert Wang

Tse-Chiang Wang

Kenneth S Collins

Dmitry Lubomirsky

Michael Robert Rice

Douglas A Buchberger, Jr

Christopher Sean Olsen

Tza-Jing Gung

Dan A Marohl

Arthur H Sato

Michael N Grimbergen

Ankur Agarwal

Jon McChesney

Anisul Haque Khan

Walter R Merry

Alan Hiroshi Ouye

Sergio Fukuda Shoji

Kenny Linh Doan

Haitao Wang

Brad L Mays

Xiaoping Zhou

Changhun Lee

Michael G Chafin

Nicolas Gani

Martin Jeff Salinas

Ying Rui

Hun Sang Kim

Usama Dadu

Jin-Yuan Chen

Samer Banner

Hean Cheal Lee

Jonathan Kolbeck

Li-Sheng Chiang

Ryan Giar

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Plasma processing assembly using pulsed-voltage and radio-frequency power

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Plasma processing using pulsed-voltage and radio-frequency power

Pulsed-voltage hardware assembly for use in a plasma processing system

Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.

Dual-level pulse tuning

Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

Processing chamber with substrate edge enhancement processing

Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Cooling mechanism utilized in a plasma reactor with enhanced temperature regulation

Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability

Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Inductively coupled plasma apparatus

Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Power deposition control in inductively coupled plasma (ICP) reactors

A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

Method, apparatus and system for wafer dechucking using dynamic voltage sweeping

Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

Enhanced plasma source for a plasma reactor

A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

High efficiency triple-coil inductively coupled plasma source with phase control

Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation

Growing community of inventors

Palo Alto, CA, United States of America

Valentin Nikolov Todorow