Newsouth Innovations Pty Limited

Solar Analytics Pty Ltd.

Valantis Vais

Stuart Ross Wenham

Jing Ji

Alison Maree Wenham

Alison Joan Lennon

Brett Jason Hallam

Catherine Emily Chan

Pei Hsuan Lu

Adeline Sugianto

Xi Wang

Stefan Jarnason

Avantika Basu

Jingnan Tong

A method for analyzing performance of a solar photovoltaic installation data indicating measured value of power generated by the photovoltaic installation receives and stores that data in a database. An expected output of the installation for at least one period of a test day using a first method is determined. The first expected output of the installation is compared with the measured value of power generated. If the expected output of the installation determined by the first method differs from the measured value by more than an acceptable tolerance, an expected output using another method is determined. If the expected output of the installation determined by the other method differs from the measured value by more than an acceptable tolerance, an under performance warning for the solar photovoltaic installation is issued.

Monitoring system

A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.

Passivation scheme for solar cells

A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Metal contact scheme for solar cells

A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity to the surface of the substrate, with each of these impurity atoms having different diffusion coefficients or segregation coefficients; b) locally melting a point on the surface of the substrate with a laser, whereby the at least two different types of impurity atoms are incorporated into the melted silicon material; c) removing the laser to allow the silicon material to recrystallize; d) controlling a rate of application and/or removal of the laser to control the creation of the impurity distribution profile, with different distribution profiles for each of the at least two types of impurity atoms in the recrystallized material.

Formation of localised molten regions in silicon containing multiple impurity types

Growing community of inventors

Beverley Park, Australia

Valantis Vais