Qualcomm Incorporated

Vaishnav Srinivas

Vivek Mohan

David Ian West

Michael J Brunolli

Dexter Tamio Chun

Abheek Gupta

Vijay Shankar

Philip Michael Clovis

Farrukh Aquil

Robert Won Chol Kim

Mahalingam Nagarajan

Jungwon Suh

Yong Xu

Patrick Isakanian

Tauseef Kazi

Michael Drop

Sumeet Singh Sethi

Jan Christian Diffenderfer

John D Eaton

Vinodh Ramesh Cuppu

Stephen Thilenius

Renatas Jakushokas

Isaac Berk

Vikram Arora

Jeff Gemar

Asim Muhammad Muneer

Abhay S Dixit

Deepti Vijayalakshmi Sriramagiri

Charles David Paynter

Jason Alan Thurston

Srinivas Maddali

Xavier Loic Leloup

Michael David Jager

Christophe Avoinne

Shraddha Sridhar

Sanat Kapoor

Yuehchun Claire Cheng

Guneet Singh

Bernie Jord Yang

Michael Joseph Brunolli

Isaac D Berk

Muhammad A Muneer

A method for providing low latency frequency switching includes operating a first processing component on a first die and operating a second processing component on a second die with the same first clock signal having a first frequency. A request to switch the first frequency to a second, new frequency is received and a second clock signal having the second, new frequency is produced. Data flow between the first die and second die may be stopped. And then the second clock signal is transmitted to a dual phased locked loop architecture on a die interface. A PCLK signal is created from the combined first and second clock signals and an NCLK signal is created from the second clock signal. Next, the PCLK signal is divided and aligned with the NCLK signal. Once the PCLK signal is aligned with the NCLK signal, data flow is resumed between the two dies.

System for providing a low latency and fast switched cascaded dual phased lock loop (PLL) architecture for die-to-die / system-on-chip (SoC) interfaces

Methods and apparatuses for improve clocking scheme to reduce power consumption are presented. The apparatus includes a host configured to communicate with a memory via a link. The host is further configured to receive a first clock from the memory; to receive, based on the first clock, data from the memory, in a first mode of a read operation; to generate a second clock, the second clock being generated independent of the first clock; and to receive, based on the second clock, data from the memory, in a second mode of the read operation.

Clocking scheme to receive data

Signal timing drift in a synchronous dynamic random access memory (SDRAM) system may be compensated for by performing write signal timing training using a multi-purpose command (MPC) first-in-first-out (FIFO) write and MPC FIFO read at periodic intervals interspersed with mission-mode SDRAM traffic. The test result samples obtained from the write signal timing training may be analyzed independently of mission-mode SDRAM traffic. The mission-mode timing of the SDRAM data bit signals relative to the SDRAM write clock signal may be adjusted based on the analysis.

System and method for compensating for SDRAM signal timing drift through periodic write training

A memory interface includes: a pull-up device and a pull-down device, wherein the pull-up device couples between a power rail and a data line, and wherein the pull-down device couples between the data line and ground; and a power supply configured to supply a first power supply voltage to the power rail during a terminated data transmission mode in which a receiving memory interface coupled to the data line has an active on-die termination, and wherein the power supply is further configured to supply a second power supply voltage to the power rail during an unterminated data transmission mode in which the on-die termination does not load the data line, the second power supply voltage being less than the first power supply voltage.

Memory interface with adjustable voltage and termination and methods of use

Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Dynamic random access memory (DRAM) backchannel communication systems and methods

Methods, apparatus, and system for use in adaptive communication interfaces are disclosed. An adaptive communication interface is provided, in which a high-speed clock provided in a high-speed mode of operation is suppressed in a low-power mode of operation. In the low-power mode of operation, a low-speed command clock is used for data transfers between a memory device and a system-on-chip, applications processor or other device. A method for operating the adaptive communication interface may include using a first clock signal to control transmissions of commands to a memory device over a command bus. In a first mode of operation, the first clock signal controls data transmissions over the adaptive communication interface. In a second mode of operation, the second clock signal controls data transmissions over the adaptive communication interface. The frequency of the second clock signal may be greater than the frequency of the first clock signal.

Low-power clocking for a high-speed memory interface

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The signal is then returned to the SoC, where it may be examined by a closed-loop engine of the SoC. A result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses

Various aspects of an approach for routing die signals in an interior portion of a die using external interconnects are described herein. The approach provides for contacts coupled to circuits in the interior portion of the die, where the contacts are exposed to an exterior portion of the die. The external interconnects are configured to couple these contacts so that signals from the circuits in the interior portion of the die may be routed externally to the die. In various aspects of the disclosed approach, the external interconnects are protected by a packaging for the die.

Method and apparatus for routing die signals using external interconnects

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A training signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The training signal is then returned to the SoC, where it may be examined by a closed-loop training engine of the SoC. A training result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop training engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Systems and methods are disclosed for configuring dynamic random access memory (DRAM) in a personal computing device (PCD). An exemplary method includes providing a shared command access (CA) bus in communication with a first DRAM and a second DRAM. A first command from a system on a chip (SoC) is received at the first DRAM and the second DRAM. A decoder of the first DRAM determines whether to mask a mode register write (MRW) in response to the received first command. A second command containing configuration information is received vie the shared CA bus at the first DRAM and the second DRAM. Responsive to the determination by the decoder of the first DRAM, the received MRW is either ignored or implemented by the first DRAM.

Systems and methods for individually configuring dynamic random access memories sharing a common command access bus

Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.

Dynamic control of signaling power based on an error rate

A duty cycle correction circuit includes a rising edge variable delay circuit and a falling edge variable delay circuit. The variable delay for each delay circuit depends upon an uncorrected duty cycle for an uncorrected clock signal being corrected by the duty cycle correction circuit into a corrected clock signal having a desired duty cycle.

Wide-band duty cycle correction circuit

Growing community of inventors

San Diego, CA, United States of America

Vaishnav Srinivas