Globalfoundries Inc.

Vaidyanathan T Subramanian

Josef S Watts

Tamilmani Ethirajan

Amit A Dikshit

Shrinivas J Pandharpure

Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (f) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (V); extracting a transconductance (G) from the first set of in-line DC parameters as a function of a gate-voltage (V) and the first drain-voltage (V); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (V); extracting a total gate capacitance (C) from the second set of in-line DC parameters as a function of the gate-voltage (V); and predicting the unity gain frequency (f) of the MOSFET based upon the extracted transconductance (G) and the extracted total gate capacitance (C).

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Bengaluru, India

Vaidyanathan T Subramanian