Applied Materials, Inc.

Vahid Firouzdor

Jennifer Y Sun

Biraja Prasad Kanungo

Ying Di Zhang

Tom K Cho

Vedapuram S Achutharaman

David Koonce

Jared Ahmad Lee

Martin Jeffrey Salinas

Sumanth Banda

Yikai Chen

Rajinder Dhindsa

Christopher L Beaudry

Joseph Frederick Behnke

Daniel Sang Byun

Joseph Frederick Sommers

Hyun-Ho Doh

Dana Marie Lovell

Kartik Ramaswamy

Senh Thach

Leonard Michael Tedeschi

Changgong Wang

Ying Zhang

Teng-Fang Kou

Benjamin C E Schwarz

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

Chamber components with polished internal apertures

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

Chambers and coatings for reducing backside damage

Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Yttrium oxide based coating composition

An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

Plasma erosion resistant thin film coating for high temperature application

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 &#x3bc;in.

A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises YAlOhaving a dielectric constant of 9.76+/&#x2212;up to 30% and a hermiticity of 4.4E-10 cm/s+/&#x2212;up to 30%.

Plasma erosion resistant rare-earth oxide based thin film coatings

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF, ErAlO, ErAlO, and a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er&#x2014;Y composition, an Er&#x2014;Al&#x2014;Y composition, an Er&#x2014;Y&#x2014;Zr composition, and an Er&#x2014;Al composition.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 &#x3bc;m over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

Rare-earth oxide based coatings based on ion assisted deposition

Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of YAlO, ErO, ErAlO, and a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may have a thickness of about 5 nm to about 3 &#x3bc;m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

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San Mateo, CA, United States of America

Vahid Firouzdor