Applied Materials Israel Limited

Vadim Vereschagin

Roman Kris

Ishai Schwarzband

Grigory Klebanov

Elad Sommer

Boaz Cohen

Rafael Bistritzer

Ariel Shkalim

Evgeny Bal

Ilan Ben-Harush

Sharon Duvdevani-Bar

Sahar Levin

Shimon Levi

Einat Frishman

Assaf Shamir

Gal Daniel Gutterman

Jannelle Anna Geva

Efrat Noifeld

Meng Li Cecilia Lim

Roi Meir

Hiroshi Miroku

Kasturi Saha

Taku Yoshizawa

Arundeepth Thamarassery

Omer Kerem

Asaf Golov

A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to:

Examination of a hole formed in a semiconductor specimen

Input data may be received. The input data may include an image of a pattern and location data that identifies a modified portion of the pattern. A processing device may determine a first parameter of a first dimension within the pattern and a second parameter of a second dimension outside of the pattern. A combined set may be generated based on the first parameter and the second parameter. A defect associated with the modified portion may be classified based on the combined set.

Determining a critical dimension variation of a pattern

There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

Local shape deviation in a semiconductor specimen

A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

Method, system and computer program product for 3D-NAND CDSEM metrology

A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.

Evaluating an intermediate product related to a three-dimensional NAND memory unit

A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.

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Hod-Hasharon, Israel

Vadim Vereschagin