Intel Corporation

Vadim Sherman

Xiaoqing Ma

King Gonzalez

Stewart M Ongchin

Stephen Tisdale

Devices and methods for their formation, including electronic assemblies having a shape memory material structure, are described. In one embodiment, a device includes a package substrate and an electronic component coupled to the package substrate. The device also includes a shape memory material structure coupled to the package substrate. In one aspect of certain embodiments, the shape memory material structure is formed from a material selected to have a martensite to austenite transition temperature in the range of 50-300 degrees Celsius. In another aspect of certain embodiments, the shape memory material structure is positioned to extend around a periphery of the electronic component. Other embodiments are described and claimed.

Package substrate dynamic pressure structure

An apparatus and system including a substrate having a plurality of through-holes therethrough, and an integrated circuit (IC) socket frame to mount to the substrate. The IC socket frame may include a plurality of beam features, each extending from a socket frame body and corresponding in arrangement to the plurality of through-holes through the substrate.

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Scottsdale, AZ, United States of America

Vadim Sherman