Globalfoundries U.S. Inc.

V V S S Satyasuresh Choppalli

Vibhor Jain

John Joseph Pekarik

Alexander M Derrickson

Anupam Dutta

Rui Tze Toh

Oscar Restrepo

Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an intrinsic base including a first semiconductor layer, a collector including a second semiconductor layer, and an emitter including a third semiconductor layer. The first semiconductor layer, which comprises silicon-germanium, includes a first portion and a second portion adjacent to the first portion. The second semiconductor layer includes a portion on the first portion of the first semiconductor layer, and the third semiconductor layer includes a portion on the second portion of the first semiconductor layer. The structure further comprises a dielectric spacer laterally between the portion of the second semiconductor layer and the portion of the third semiconductor layer.

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Bengaluru, India

V V S S Satyasuresh Choppalli