Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Osram Opto Semiconductors Gmbh

Friedrich-schiller-universitat Jena

Ezono Ag

Sypro Optics Gmbh

Uwe Zeitner

Hans-Christoph Eckstein

Wolfgang Schmid

Eliseo Sobrino

Sicco Schets

Peter Schreiber

Allan Dunbar

Ernst-Bernhard Kley

Armin Leitel

Ralf Waldhäusl

Reiner Guether

Tina Weichelt

Yannick Bourgin

Allen Dunbar

The invention relates to an electromagnetic optical element which scatters radiation in a diffuse manner. Such optical elements can be used in nearly all projection applications including front and rear projection, display applications, (cinema) screens and similar. On the surface of a claimed optical element, a surface profile is provided, the surface structure of which is non-repeating and irregular. Elevations are formed that have a height by means of which a phase shift &#x394;&#x3d5; may be achieved that is greater than two and a half times the longest wavelength used, and the elevations have a lateral extension in one plane respectively, in all axial directions, that is greater than five times the longest wavelength used. The individual elevations have a continuous form in the three spatial axial directions and said elevations are devoid of edges, ledges and fissures.

Electromagnetic radiation-scattering element and method of manufacturing same

An illumination unit for lithographic exposure and a device for lithographic exposure are disclosed. In an embodiment the illumination unit includes a beam source, an electronically drivable beam deflection element for generating a temporally varying two-dimensional beam deflection, a collimation lens, a beam homogenizing element, a Fourier lens and a field lens.

Illumination unit and device for lithographic exposure

An opto-electrical ultrasound sensor, preferably for the use in medical diagnostics, comprising at least one light source (), a photo detector () illuminated by the light source () and capable of producing an electrical signal indicative of the intensity of the light incident on the photo detector (), and an optical ultrasound detector () located in the optical path between the light source () and the photo detector () and capable of modulating in response to an ultrasound signal the intensity of at least part of the light incident on photo detector () from the light source (). The opto-electrical ultrasound sensor further comprises intensity adjustment means () for adjusting the intensity of the light incident on the photo detector () via the optical ultrasound detector ().

Opto-electrical ultrasound sensor and system

The present invention relates to the creation of a diffractive element that has a high degree of wavefront flatness. The diffractive element has a flat functional substrate with a first side, whereby a fine structure is arranged on or in this first side, and whereby the first side of this functional substrate is arranged on a flat carrier substrate, whereby the carrier substrate has a higher degree of rigidity than the functional substrate.

Diffractive element with a high degree of wavefront flatness

An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Edge emitting semiconductor laser

An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Edge emitting semiconductor laser having a phase structure

An ultrasonic probe for optical detection of ultrasonic waves includes a membrane integrated into the probe for contact with a body, the membrane being excited to vibration by reflected ultrasonic waves, leading to a change in optical path length of a beam of light directed at the membrane, which change is determined interferometrically.

Ultrasonic probe and method for the optical detection of ultrasonic waves

The invention relates to an illumination module for color display, preferably for use in data or video projectors as well as rear projection television sets, in which the light from at least three luminescent diodes (LEDs) or LED arrays of the base colors red, green and blue is collimated at a point provided for connection to a display unit and ranged on an optical axis of the illumination module. An LED or an LED array of a base color with a beam path (Lr) oriented in the direction of the display unit is arranged on the optical axis of the illumination module. For the purpose of color mixing, the LEDs and LED arrays of the other base colors are attached in such a way tat their beam paths (Lg, Lb) are laterally input in sequence under input angles (&#x3b1;, &#x3b2;) of &#x3c;90 degrees into the beam path (Lr) of the first base color.

Illumination module for color display

The invention relates to a laser resonator for semiconductor lasers having a waveguiding layer which is disposed between a substrate and a superstrate, the waveguiding layer, the substrate and/or the superstrate of the laser resonator having at least one phase structure which varies locally in such a manner that at least one predetermined laser mode is influenced in its propagation characteristic.

Growing community of inventors

Weimar, Germany

Uwe Zeitner