Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Ag

Csram Opto Semiconductors Gmbh

Uwe Strauss

Volker Härle

Ulrich Zehnder

Dominik Eisert

Alfred Lell

Christoph Eichler

Berthold Hahn

Johannes Baur

Johannes Völkl

Matthias Sabathil

Michael Fehrer

Adrian Stefan Avramescu

Soenke Tautz

Matthias Peter

Clemens Vierheilig

Andreas Weimar

Stephan Lutgen

Lutz Höppel

Martin Strassburg

Hans-Jürgen Lugauer

Norbert Stath

Stefan Bader

Wolfgang Reill

Karsten Auen

Peter Brick

Stefan Illek

Martin Rudolf Behringer

Hubert Ott

Volker Haerle

Raimund Oberschmid

Georg Brüderl

Manfred Mundbrod-Vangerow

Ulrich Jacob

Werner Plass

Helmut Bolay

Franz Eberhard

Désirée Queren

Magnus Ahlstedt

Christian Rumbolz

Markus Arzberger

Frank Kuehn

Harald Koenig

Christian Lauer

Dimitri Dini

Marianne Ortmann

Andreas Weimer

Lutz Hoeppel

Norbert Linder

Harald König

Ernst Nirschl

Kirstin Petersen

Marc Schillgalies

Frank Baumann

Sönke Tautz

Thomas Höfer

Frank Kühn

Stephan Miller

Reinhard Sedlmeier

Christine Höss

Volker Hârle

Stefanie Brüninghoff

Christoph Jonda

Jacob Ulrich

Manfred Mundbrod

Frank KÜHN

Volker HÄRLE

A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Optoelectronic semiconductor chip and method for the production thereof

A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas.

Semiconductor component and method for producing a semiconductor component

A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed.

Housing for laser diodes and method for producing a housing

A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.

Method for producing an optoelectronic component, and an optoelectronic component

A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 &#x3bc;m is arranged between the laser diode chip and the mounting part.

Laser diode assembly

An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition:50&#x2266;&#x222b;(35&#x2212;())&#x2212;2.5&#x2212;1.5&#x222b;&#x2266;120.

Optoelectronic semiconductor chip

Housing for an optoelectronic semiconductor component and method for producing such a housing

A method for manufacturing a radiation-emitting component () in which a field distribution of a near field () in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile () along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Method for producing a radiation-emitting component and radiation-emitting component

A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 &#x3bc;m.

Laser diode device

An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (): a p doped barrier layer () for an active region (), the active region (), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer () for the active region (). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

Edge-emitting semiconductor laser

In at least one embodiment of the optoelectronic semiconductor chip (), the latter is based on a nitride material system and comprises at least one active quantum well (). The at least one active quantum well () is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well () comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well () have mutually different average indium contents c. Furthermore the at least one active quantum well () fulfills the condition:40&#x2266;&#x222b;()&#x2212;2.5&#x2212;1.5&#x222b;&#x2266;80.

A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing.

Laser diode devices

An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

Edge emitting semiconductor laser chip

Growing community of inventors

Bad Abbach, Germany

Uwe Strauss