Advanced Micro Devices Corporation

Globalfoundries Inc.

Uwe Stoeckgen

Axel Preusse

Norbert Schroeder

Axel Kiesel

John Lampett

Heiko Wundram

Markus Nopper

Gerd Marxsen

Jens Kramer

Gerd Franz Christian Marxsen

Jens Kunath

The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.

Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces

A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Method and system for controlling chemical mechanical polishing by controllably moving a slurry outlet

Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress.

The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

Method of reworking a semiconductor structure

In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to estimate the status of one or more consumables in a CMP system.

Method and system for controlling the chemical mechanical polishing by using a sensor signal of a pad conditioner

The present invention is directed to a method and apparatus for performing polishing operations on substrates in an integrated circuit manufacturing environment. In one embodiment, the apparatus is comprised of a movable polishing platen, a polishing pad positioned on the platen, and a polishing arm that is adapted to receive and move the substrate relative to the polishing pad. The apparatus further comprises a first pad conditioner with a first conditioning surface that is positionable to allow contact between the first conditioning surface and the polishing pad, and a second pad conditioner with a second conditioning surface that is positionable to allow contact between the second conditioning surface and the polishing pad. In one embodiment, the method of the present invention comprises positioning a substrate to be polished in a polishing tool, supplying a polishing slurry to the tool, and providing relative movement between the substrate and a polishing pad. The method further comprises urging first and second pad conditioners into contact with the polishing pad, and providing a relative movement therebetween.

Apparatus and method for chemical mechanical polishing of a substrate

A polishing head and an apparatus for the chemical mechanical polishing (CMP) of a substrate are provided in which a conditioning surface is integrated in or directly coupled to the polishing head so that a simplified structure of the CMP apparatus can be obtained. Furthermore, establishing quite similar pad conditions may be achieved. Preferably, the conditioning surface is integrated into the retaining element of sophisticated CMP apparatuses, thereby allowing the application of an adjustable pressure to the conditioning surface.

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Dresden, Germany

Uwe Stoeckgen