Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Universitaet Duisburg—essen Forsthausweg

Uwe Paschen

Holger Vogt

Frank Hochschulz

Heinz Deiters

Stefan Dreiner

Susanne Linnenberg

Dirk Nachrodt

The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.

Photodetector, image sensor and method for manufacturing

A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/&#xb0; C.

Thin-film resistor with a layer structure and method for manufacturing a thin-film resistor with a layer structure

Growing community of inventors

Dortmund, Germany

Uwe Paschen