Wacker Chemie Ag

Uwe Pätzold

Michael Stepp

Laszlo Fabry

Robert Ring

Jan Prochaska

Jens Felix Knoth

Maximilian Aigner

Gerhard Traunspurger

Karl-Heinz Rimböck

Markus Niemetz

Andreas Hirschmann

Marek Sobota

Noemi Banos

Martin Zettl

Christian Schierlinger

Anton Reisbeck

Manfred Surner

Sebastian Bochmann

Sebastian Prost

Monika Straßer

A process for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group comprising a boron compound, a phosphorus compound, and an arsenic compound is provided. The process includes contacting the liquid mixture with an unfunctionalized organic polymer having pores with an average pore diameter of less than 50 Å, the average pore diameter being determined in accordance with DIN ISO 66134, and optionally removing the unfunctionalized organic polymer.

Process for removing an impurity from a chlorosilane mixture

Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by where

Method for removing an impurity from a chlorosilane mixture

A process for obtaining hexachlorodisilane and uses for the same. The process includes contacting at least one partially hydrogenated chlorodisilane of general formula HSiClwhere x is from 1 to 5 in the liquid state with a solid non-functionalized adsorber material that is selected from the group comprising silicates, aluminosilicates, organic polymer and/or combinations thereof. The process also includes optionally separating the hexachlorodisilane and/or optionally separating the adsorber material.

Method for obtaining hexachlorodisilane by reacting at least one partially hydrogenated chlorodisilane on a solid unfunctionalized adsorber

The invention relates to a process for hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850&#xb0; C. and 1600&#xb0; C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850&#xb0; C. and 1600&#xb0; C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 10% based on hydrogen.

Process for hydrogenating silicon tetrachloride

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Burghausen, Germany

Uwe Pätzold