Infineon Technologies Ag

Infineon Technologies Bipolar Gmbh & Co. Kg

Other

Uwe Kellner-Werdehausen

Reiner Barthelmess

Hans-Joachim Schulze

Franz-Josef Niedernostheide

Peter Weidner

Dirk Pikorz

Jens Przybilla

Mario Schenk

Markus Droldner

Michael Stelte

Sebastian Paul Sommer

Frank Dieter Pfirsch

Thomas Basler

Franz Josef Niedernostheide

Jörg Dorn

Josef Lutz

Dieter Silber

Oskar Neuhoff

Tobias Gamon

Heinrich Gerstenkoeper

Johann Breu

Ralf Joerke

Harald Kuhn

Harald Nübel

Christof Drilling

Juergen Schiele

Kurt Bauer

Norbert Haueis

Eswar Kumar Chukaluri

A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis. The etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges on the edge face only with a part of the jet cross section. A corresponding device for producing an edge structure of a semiconductor component is also described.

Method and device for producing an edge structure of a semiconductor component

A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.

Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Short-circuit semiconductor component and method for operating it

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Short-circuit semiconductor component and method for operating same

A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

Semiconductor component including a short-circuit structure

A semiconductor component includes At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Semiconductor component with optimized edge termination

A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element.

Arrangement including a semiconductor device and a connecting element

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (), in which a p-doped emitter (), an n-doped base (), a p-doped base () and an n-doped main emitter () are arranged successively in a vertical direction (v). The p-doped emitter () has a number of heavily p-doped zones () having a locally increased p-type doping.

A thyristor has a radiation-sensitive breakdown structure (), a gate electrode () that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage () equipped with an n-doped auxiliary emitter (), which forms a pn-junction () together with the p-doped base (), the thyristor being both electrically and radiation-ignited. In a method for contacting a thyristor that can be ignited by radiation with a gate electrode (), a contact ram () that is adapted to the geometry of the gate electrode () is pressed against the thyristor. In a method for monitoring the ignition of a thyristor that is ignited by incident radiation, the electric voltage that is applied to the gate electrode () or the electrically conductive electrode () is monitored.

Thyristor which can be triggered electrically and by radiation

A main thyristor () has a recovery protection which is integrated into a drive thyristor () whose n-doped emitter () is electrically connected to a main thyristor control terminal (). Moreover, the p-doped emitter () of the drive thyristor () is electrically connected to the p-doped emitter () of the main thyristor (). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor () having anode short circuits () involves introducing particles () into a target region () of the semiconductor body () of the drive thyristor (), the distance between the target region () and a front side () of the semiconductor body () opposite to the rear side () being less than or equal to the distance between the p-doped emitter () and the front side ().

Thyristor with recovery protection

A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential resistance dR is radially constant or the power dissipated in the resistance is radially constant.

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Leutenbach, Germany

Uwe Kellner-Werdehausen