Infineon Technologies Ag

Procserv Gmbh

Uwe Jansen

Reinhold Bayerer

Peter Kanschat

Gerald Deboy

Johannes Georg Laven

Roman Baburske

Thomas Basler

Olaf Hohlfeld

Daniel Domes

Bernhard Knott

Josef Höglauer

Guido Boenig

Michael Hornkamp

Martin Schulz

Heiko Rettinger

Patrick Baginski

Martin Hierholzer

Ulrich Schwarzer

Marco Bohllaender

A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing path, the second voltage swing path including a second plurality of power transistors, the second voltage swing path producing portions of a negative half-wave of the output signal when active; a first clamping component coupled to the first voltage swing path, the first clamping component forming a freewheeling path for the first voltage swing path, the first clamping component comprising a control terminal, the first clamping component having a first stored charge when the control terminal is in a first state and a second stored charge when the control terminal is in a second state, the first stored charge being greater than the second stored charge; and a second clamping component coupled to the second voltage swing path, the second clamping component forming a freewheeling path for the second voltage swing path, the second clamping component comprising a control terminal, the second clamping component having the first stored charge when the control terminal is in the first state and the second stored charge when the control terminal is in the second state.

System and method for a power inverter with controllable clamps

A semiconductor module includes an electrically conductive lower contact piece and an electrically conductive upper contact piece spaced apart from one another in a vertical direction. The module further includes a semiconductor chip having a first load connection and a second load connection. The semiconductor chip is electrically conductively connected by the second load connection to the lower contact piece, and electrically conductively connected to the upper contact piece by at least one bonding wire bonded to the first load connection. An explosion protection means is arranged between the first load connection and the upper contact piece and into which each of the bonding wires is embedded over at least 80% or over at least 90% of its length.

Explosion-protected semiconductor module

A semiconductor switching arrangement includes a normally on semiconductor component of a first conduction type and a normally off semiconductor component of a second conduction type which is the complement of the first conduction type. A load path of the normally off semiconductor component is connected in series with the load path of the normally on semiconductor component. A first actuation circuit connected between the control connection of the normally on semiconductor component and a load path connection of the normally on semiconductor component. The load path connection of the normally on semiconductor component is arranged between the normally on and normally off semiconductor components. A second actuation circuit is connected between the control connection of the normally off semiconductor component and a load path connection of the normally off semiconductor component. The load path connection of the normally off semiconductor component is arranged between the normally on and normally off semiconductor components.

Semiconductor switching arrangement having a normally on and a normally off transistor

A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit.

Power circuit

A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.

Circuit arrangement including voltage supply circuit

An embodiment of the invention relates to a circuit assembly having the following components: a power transistor with a control terminal, a first load terminal and a second load terminal, the second load terminal having a floating potential; a driver circuit configured to generate control signals for the control terminal of the power transistor, the relevant reference potential for the driver circuit being the floating potential of the second load terminal; a planar metallization layer sited on or in a substrate and comprising a constant reference potential, a shielding plane isolated from the metallization layer, sited planar on or in the substrate such that it is capacitively coupled to the metallization layer; a power supply circuit for providing a supply voltage referenced to the floating potential of the second load terminal for the driver circuit, the power supply circuit comprising, circuited between the second load terminal and the shielding plane, a first series circuit including a first capacitor and a first diode.

Circuit assembly for gating a power semiconductor switch

An integrated circuit includes a substrate and an inductive device on a first side of the substrate. The integrated circuit includes a first ferromagnetic material on a second side of the substrate opposite the first side.

Integrated circuit including inductive device and ferromagnetic material

Circuit arrangement including a voltage supply circuit and semiconductor switching element

Temperature detection for a semiconductor component is disclosed. One embodiment includes a circuit arrangement for measuring a junction temperature of a semiconductor component that has a gate electrode and a control terminal being connected to the gate electrode and receiving a control signal for charging and discharging the gate electrode, where the gate electrode is internally connected to the control terminal via an internal gate resistor. The circuit arrangement includes: a measuring bridge circuit including the internal gate resistor and providing a measuring voltage which is dependent on the temperature dependent resistance of the internal gate resistor; an evaluation circuit receiving the measuring voltage and providing an output signal dependent on the junction temperature; a pulse generator providing a pulse signal including pulses for partially charging or discharging the gate electrode via the internal gate resistor.

Temperature detection for a semiconductor component

Disclosed is a control circuit for controlling a controllable power semiconductor switch, and to a power semiconductor module. The control circuit comprises at least two circuit sets, each having a power driver. The power driver of each of the circuit sets is provided with power via impedance components having an impedance other than zero.

Control circuit for a power semiconductor assembly and power semiconductor assembly

The invention relates to a circuit arrangement for providing a voltage supply for a driver circuit for driving a semiconductor switch. The circuit arrangement has: a first bootstrap circuit which is supplied with a first auxiliary voltage referring to a lower supply potential, the bootstrap circuit comprising a first capacitor which provides a supply voltage for the driver circuit; a first charge pump which is designed to keep the charge in the first capacitor at or above a particular level at least during a particular period of time; a second bootstrap circuit which is supplied with a second auxiliary voltage referring to an upper supply potential, the bootstrap circuit comprising a second capacitor which provides a supply voltage for the first charge pump; and a second charge pump which is designed to generate the second auxiliary voltage.

Circuit arrangement for providing a voltage supply for a transistor driver circuit

A semiconductor module comprises at least one semiconductor chip having at least one semiconductor switch. The at least one semiconductor chip is arranged on a carrier substrate. At least one driver component drives the at least one semiconductor switch. The at least one driver component is arranged on a circuit board. The at least one driver component has at least one input for receiving a control signal. The circuit board has a galvanic isolation in a signal path between the at least one driver component and the at least one semiconductor chip.

Semiconductor module with switching components and driver electronics

A desaturation circuit for an IGBT is disclosed. In one embodiment, flooding of the component with charge carriers is reduced before the IGBT is turned off.

Desaturation circuit for an IGBT

A semiconductor circuit arrangement is disclosed. In one embodiment, a semiconductor module is attached to a board using a screw, with a mechanical and electrical contact being made between module contacts on the semiconductor module and associated board contacts on the board at the same time by attachment using the screw.

Growing community of inventors

Werl, Germany

Uwe Jansen