Carl Zeiss Smt Gmbh

Uwe Hempelmann

Markus Mengel

Eugen Foca

Peter Huber

Frank Schleicher

Frank Schadt

Microlithographic projection exposure apparatus () has a projection lens () configured to image an object plane () onto an image plane (), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus between the projection lens and the image plane, wherein a measurement structure () is arranged in the immersion liquid, and wherein the measurement structure is configured to generate a measurement pattern. The projection exposure apparatus also has a measurement device () configured to measure the measurement pattern. The measurement structure has an absorption layer () including silicon oxide and/or silicon oxynitride and/or nitride.

Projection exposure apparatus and method for measuring a projection lens

An arrangement for and a method of characterizing the polarization properties of an optical system, in particular an optical system of a microlithographic projection exposure apparatus. The arrangement includes at least one polarization state generator () which sets a defined polarization state of radiation incident on the optical system, and a polarization state detector () adapted to measure the exit polarization state of radiation issuing from the optical system, wherein the optical system is designed for a working wavelength of less than 15 nm, and wherein the polarization state generator and/or the polarization state detector are so designed that their polarization-optical action on an incident light beam is substantially constant over an angle spectrum of the light beam of at least 10&#xb0;.

Growing community of inventors

Aalen, Germany

Uwe Hempelmann