International Business Machines Corporation

Utz Herwig Hahn

Marc Seifried

Lukas Czornomaz

Heinz Schmid

Jean Fompeyrine

Stefan Abel

Folkert Horst

The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 1.54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation.

Electro-optical and optoelectronic devices

The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.

Electro-optical device with asymmetric, vertical current injection ohmic contacts

A non-polar, III-Nitride semiconductor fin field-effect transistor (hereafter 'finFET') includes both a fin and a Si(110) silicon substrate, the silicon substrate having a support surface parallel to a Si(110) plane of the silicon substrate. The fin includes a III-Nitride crystalline layer grown along its c-direction, so as to have sidewalls that are parallel to m and a planes of the III-Nitride crystalline layer. The c-direction is parallel to a Si&#x3c;111&#x3e; direction of the silicon substrate, such that two opposite ones of said sidewalls are parallel to the support surface of the silicon substrate. Related devices and methods of fabrication are also provided.

Non-polar, III-nitride semiconductor fin field-effect transistor

A device includes an n-doped InP layer and an ohmic contact, in contact with the n-doped InP layer. The ohmic contact includes an annealed stack of at least three, or preferably four alternating layers of Si and Ni, such that: (i) the n-doped InP layer and one of the layers of the stack in contact with the n-doped InP layer are at least partly intermixed; and (ii) any two adjacent layers of the stack are at least partly intermixed. Related fabrication methods are also disclosed.

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Zurich, Switzerland

Utz Herwig Hahn