International Business Machines Corporation

Utz G Baitinger

Werner O Haug

Knut K Najmann

Karl E Kroell

Otto G Folberth

Narrow channel field effect transistor

A semiconductor storage circuit for use in monolithic memories. The circuit is comprised of a storage cell coupled to input-output bit lines through active devices having symmetrical conduction properties. The storage cell can be comprised of a pair of cross coupled bipolar transistors having resistors as collector load devices. Schottky field effect transistors (MESFET's) are active devices having symmetrical conduction properties. The entire circuit of the invention is readily created in integrated form in semiconductor wafers using existing processes.

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Stuttgart, Germany

Utz G Baitinger