Lucent Technologies Inc.

Cisco Technology, Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Ii-vi Incorporated

Triquint Technology Holding Co.

Global Power Technologies Group, Inc.

Endicott Interconnect Technologies, Inc.

Agere System Optoelectronics Guardian Corp.

Triquent Technology Holding, Co.

Utpal Kumar Chakrabarti

David Reese Peale

Kishor V Desai

Soham Pathak

Ravinder Kachru

Ping Wu

Vipulkumar K Patel

Kalpendu Shastri

George John Przybylek

Bipin Dama

Stefan Pfnuer

John Matthew Fangman

Gleb E Shtengel

Dominic Paul Rinaudo

Csaba Szeles

Kevin Cyrus Robinson

Paul Sangone Chen

Ravi Kachru

Biswanath Roy

Bora M Onat

Charles H Joyner

John William Osenbach

George J Zydzik

Gustav Edward Derkits, Jr

Avinash K Gupta

Fan Ren

Abdallah Ougazzaden

Jihong John Chen

Robert Alan Hamm

Edward Semenas

Melinda Lamont Schnoes

William Scott Hobson

Charles William Lentz

Lawrence Edwin Smith

James Dennis Wynn

Michael Prokesch

Joseph Brian Seiler

William Henry Grodkiewicz

Vincent D Mattera, Jr

Michael MacMillan

Robert Comizzoli

Richard W Glew

Karen A Grim-Bogdan

Scott E Cameron

Judith Francavilla De Jong

Erdmann Frederick Schubert

Christopher Theis

John Fangman

A method of manufacturing an optical communication device includes preparing first and second pre-defined break lines in a carrier wafer. A first sub-mount is positioned near the first break line to accommodate an optical laser and a second sub-mount is positioned near the second break line to accommodate an optical modulator. The first sub-mount is secured to a thermally conductive and electrically nonconductive spacer which is secured to a thermo-electrical cooler that defines a gap between the first submount and the thermo-electrical cooler. A portion of the carrier wafer between the sub-mounts is removed.

Method for manufacturing an optical communication device

A method of manufacturing an optical communication device aligns an optical sub-assembly and an optical modulator on a carrier wafer. A first sub-mount supports the optical sub-assembly and a second sub-mount supports the optical modulator. Pre-defined break lines are placed on the carrier wafer to accommodate separation of the sub-assembly and the optical modulator. The first sub-mount connects the optical sub-assembly to a thermoelectric cooler by either an epoxy, a spacer layer, or both. The optical sub-assembly is aligned in the x/y/z directions relative to the second sub-mount in a position to match an optical height of the optical modulator in the z-direction, wherein the z-direction is a vertical direction relative to the carrier wafer.

Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide (SiC) device includes forming a thin layer of a protection material over a SiC substrate, in which the protection material has a lattice constant that substantially matches a lattice constant of SiC and the thin layer has a thickness of less than a critical layer thickness for the protection material over SiC to form a uniform interface between the protection material and SiC, forming a layer of an insulator material over the thin layer of the protection material, and forming one or more transistor structures over the insulator material.

Protective interface in silicon carbide semiconductor devices

An apparatus for providing self-aligned optical coupling between an opto-electronic substrate and a fiber array, where the substrate is enclosed by a transparent lid such that the associated optical signals enter and exit the arrangement through the transparent lid. The apparatus takes the form of a two-part connectorized fiber array assembly where the two pieces uniquely mate to form a self-aligned configuration. A first part, in the form of a plate, is attached to the transparent lid in the area where the optical signals pass through. The first plate includes a central opening with inwardly-tapering sidewalls surrounding its periphery. A second plate is also formed to include a central opening and has a lower protrusion with inwardly-tapering sidewalls that mate with the inwardly-tapering sidewalls of the first plate to form the self-aligned connectorized fiber array assembly. The fiber array is then attached to the second plate in a self-aligned fashion.

Self-aligning optical connector assembly

Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer.

Silicon carbide semiconductor devices

Techniques and configurations are provided for packaging optoelectronic devices. In particular, a lid component of an optoelectronic device is provided, and the lid component is configured to cover active components of the optoelectronic device. An optically transparent wall is also provided. The optically transparent wall is coated with an anti-reflective material and configured to interface with a section of the lid component. The optically transparent wall is joined with the section of the lid component such that the optically transparent wall and the lid provide a seal for the active components of the optoelectronic device. Additionally, the lid component has a top surface and a plurality of side surfaces that are coupled to the top surface. An optically transparent wall coated with an anti-reflective material adhesively joins to the top surface and one or more side surfaces.

Lid design to seal optical components of a transceiver module

Self-aligning connectorized fiber array assembly

In a crystal growth method, a seed crystaland a source materialare provided in spaced relation inside of a growth crucible. Starting conditions for the growth of a crystalin the growth crucibleare then established therein. The starting conditions include: a suitable gas inside the growth crucible, a suitable pressure of the gas inside the growth crucible, and a suitable temperature in the growth cruciblethat causes the source materialto sublimate and be transported via a temperature gradient in the growth crucibleto the seed crystalwhere the sublimated source material precipitates. During growth of the crystalinside the growth crucible, at least one of the following growth conditions are intermittently changed inside the growth cruciblea plurality of times: the gas in the growth crucible, the pressure of the gas in the growth crucible, and the temperature in the growth crucible

SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique

In a method of annealing a CdZnTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Annealing of semi-insulating CdZnTe crystals

A radiation detector crystal is made from CdxZn1-xTe, where 0&#x2266;x&#x2266;1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Radiation detector crystal and method of formation thereof

A semiconductor optical device structure includes passivated facets formed by first removing the native oxide contaminant with a &ldquo;non-reactive&rdquo; molecular gas etchant, such as XeF . As the oxide is removed, a passivation flux is introduced into the vacuum chamber so as to begin the process of forming a passivation layer to cover the exposed facet surface. The gas etchant is slowly turned off and the flux is increased so as to form a passivation layer of the desired thickness on the &ldquo;cleaned&rdquo; facet surface. A protective film is then be evaporated to cover the passivation layer.

Passivated optical device and method of forming the same

The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.

Semiconductor device and method of fabrication

An e-beam deposition method and apparatus uses a metallic target and localized oxygen ambient to produce an oxide film for deposition. A metallic target is first heated, then exposed to a stream of oxide, resulting in the formation of a relatively thin layer of oxide on the metallic target surface. Since the oxide has a higher vapor pressure than the underlying metal, when the target is impinged by an electron-beam current, the oxide will preferentially vaporize and be deflected toward the surface to coated.

E-beam deposition method and apparatus for providing high purity oxide films

A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

Method and device for preventing zinc/iron interaction in a semiconductor laser

A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned dielectric layer is formed on the surface so as to cover at least those regions of the surface that are intersected by the junction. An electrode is formed in an opening in the dielectric layer so as to make electrical contact with one side of the junction. Importantly, the thickness of the dielectric layer is sufficient to reduce the leakage current through it to less than about 1 nA when the operating voltage is in the range of about 20-100 V. In accordance with a preferred embodiment, the thickness of the dielectric layer is greater than about 2 &mgr;m when the applied voltage is in excess of about 20 V. Moreover, the composition of dielectric layer may be either inorganic (e.g., a silicon nitride) or a combination of inorganic and organic materials.

Non-hermetic APD

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Allentown, PA, United States of America

Utpal Kumar Chakrabarti